发明申请
- 专利标题： HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 高压器件及其制造方法
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申请号： US14483520申请日： 2014-09-11
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公开(公告)号： US20150028417A1公开(公告)日： 2015-01-29
- 发明人: Tsung-Yi Huang , Chien-Hao Huang
- 申请人： Tsung-Yi Huang , Chien-Hao Huang
- 申请人地址： TW Zhubei City
- 专利权人： RICHTEK TECHNOLOGY CORPORATION
- 当前专利权人： RICHTEK TECHNOLOGY CORPORATION
- 当前专利权人地址： TW Zhubei City
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/08
摘要：
The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a first conductive type substrate, wherein the substrate includes isolation regions defining a device region. The high voltage device includes: a drift region, located in the device region, doped with second conductive type impurities; a gate in the device region and on the surface of the substrate; and a second conductive type source and drain in the device region, at different sides of the gate respectively. From top view, the concentration of the second conductive type impurities of the drift region is distributed substantially periodically along horizontal and vertical directions.
公开/授权文献
- US09012989B2 High voltage device and manufacturing method thereof 公开/授权日：2015-04-21
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