Invention Application
- Patent Title: III-V Semiconductor Device with Interfacial Layer
- Patent Title (中): 具有界面层的III-V半导体器件
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Application No.: US14341629Application Date: 2014-07-25
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Publication No.: US20150028428A1Publication Date: 2015-01-29
- Inventor: Han Chung Lin , Laura Nyns , Tsvetan Ivanov , Dennis Van Dorp
- Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
- Applicant Address: BE Leuven BE Leuven
- Assignee: KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D,IMEC VZW
- Current Assignee: KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D,IMEC VZW
- Current Assignee Address: BE Leuven BE Leuven
- Priority: EP13177959.7 20130725
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/02 ; H01L29/20
Abstract:
A semiconductor structure comprises a substrate including a III-V material, and a high-k interfacial layer overlaying the substrate. The interfacial layer includes a rare earth aluminate. The present disclosure also relates to an n-type FET device comprising the same, and a method for manufacturing the same.
Public/Granted literature
- US09691872B2 III-V semiconductor device with interfacial layer Public/Granted day:2017-06-27
Information query
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