发明申请
US20150048312A1 SOLUTION-ASSISTED CARBON NANOTUBE PLACEMENT WITH GRAPHENE ELECTRODES 有权
溶液辅助碳纳米管放置与石墨电极

SOLUTION-ASSISTED CARBON NANOTUBE PLACEMENT WITH GRAPHENE ELECTRODES
摘要:
A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.
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