Invention Application
US20150078082A1 Non-volatile Memory Device With Current Injection Sensing Amplifier
有权
具有电流注入检测放大器的非易失性存储器件
- Patent Title: Non-volatile Memory Device With Current Injection Sensing Amplifier
- Patent Title (中): 具有电流注入检测放大器的非易失性存储器件
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Application No.: US14386816Application Date: 2013-03-15
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Publication No.: US20150078082A1Publication Date: 2015-03-19
- Inventor: Yao Zhou , Xiaozhou Qian , Ning Bai
- Applicant: Silicon Storage Technology, Inc.
- Priority: CN201210089957.9 20120330
- International Application: PCT/US13/32543 WO 20130315
- Main IPC: G11C16/26
- IPC: G11C16/26

Abstract:
A non-volatile memory device with a current injection sensing amplifier is disclosed.
Public/Granted literature
- US09373407B2 Non-volatile memory device with current injection sensing amplifier Public/Granted day:2016-06-21
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