Invention Application
- Patent Title: HIGH ASPECT RATIO ETCH WITH COMBINATION MASK
- Patent Title (中): 具有组合掩模的高平均比例
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Application No.: US14038388Application Date: 2013-09-26
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Publication No.: US20150087154A1Publication Date: 2015-03-26
- Inventor: Joydeep GUHA , Sirish K. REDDY , Kaushik CHATTOPADHYAY , Thomas W. MOUNTSIER , Aaron EPPLER , Thorsten LILL , Vahid VAHEDI , Harmeet SINGH
- Applicant: Lam Research Corporation
- Main IPC: H01L21/308
- IPC: H01L21/308
Abstract:
A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.
Public/Granted literature
- US09018103B2 High aspect ratio etch with combination mask Public/Granted day:2015-04-28
Information query
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