公开(公告)号：US20150340603A1

公开(公告)日：2015-11-26

申请号：US14818225

申请日：2015-08-04

Applicant: Lam Research Corporation

Inventor： Meihua SHEN ,  Harmeet SINGH ,  Samantha S.H. TAN ,  Jeffrey MARKS ,  Thorsten LILL ,  Richard P. JANEK ,  Wenbing YANG ,  Prithu SHARMA

IPC: H01L43/12 ,  H01L45/00

CPC classification number: H01L43/12 ,  C23F1/08 ,  C23F1/12 ,  C23F4/00 ,  H01L21/02554 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L45/1675

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds.

Abstract translation: 提供一种用于在一个或多个循环中用至少一个金属层蚀刻堆叠的方法。 进行引发步骤，将至少一个金属层的一部分转化为金属氧化物，金属卤化物或晶格损坏的金属部位。 执行反应性步骤提供一个或多个循环，其中每个循环包括提供有机溶剂蒸气以形成溶剂化金属，金属卤化物或金属氧化物状态，并提供有机配体溶剂以形成挥发性有机金属化合物。

公开(公告)号：US20150280114A1

公开(公告)日：2015-10-01

申请号：US14325911

申请日：2014-07-08

Applicant: Lam Research Corporation

Inventor： Meihua SHEN ,  Harmeet SINGH ,  Samantha S.H. TAN ,  Jeffrey MARKS ,  Thorsten LILL ,  Richard P. JANEK ,  Wenbing YANG ,  Prithu SHARMA

IPC: H01L43/12

CPC classification number: H01L43/12 ,  C23F1/08 ,  C23F1/12 ,  C23F4/00 ,  H01L21/02554 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L45/1675

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds. A desorption of the volatile organometallic compounds is performed.

Abstract translation: 提供一种用于在一个或多个循环中用至少一个金属层蚀刻堆叠的方法。 进行引发步骤，将至少一个金属层的一部分转化为金属氧化物，金属卤化物或晶格损坏的金属部位。 执行反应性步骤提供一个或多个循环，其中每个循环包括提供有机溶剂蒸气以形成溶剂化金属，金属卤化物或金属氧化物状态，并提供有机配体溶剂以形成挥发性有机金属化合物。 进行挥发性有机金属化合物的解吸。

公开(公告)号：US20150087154A1

公开(公告)日：2015-03-26

申请号：US14038388

申请日：2013-09-26

Applicant: Lam Research Corporation

Inventor： Joydeep GUHA ,  Sirish K. REDDY ,  Kaushik CHATTOPADHYAY ,  Thomas W. MOUNTSIER ,  Aaron EPPLER ,  Thorsten LILL ,  Vahid VAHEDI ,  Harmeet SINGH

IPC: H01L21/308

CPC classification number: H01L21/3081 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11556

Abstract: A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.

Abstract translation: 提供了一种用于蚀刻堆叠中的特征的方法。 通过在堆叠上形成包含碳或氧化硅的第一硬掩模层形成组合硬掩模，在第一硬掩模层上形成包含金属的第二硬掩模层，以及对第一和第二硬掩模层进行构图。 堆叠通过组合硬掩模进行蚀刻。

公开(公告)号：US20230317424A1

公开(公告)日：2023-10-05

申请号：US18020213

申请日：2021-08-17

Applicant: Lam Research Corporation

Inventor： Harmeet SINGH ,  Robin KOSHY ,  Adrian RADOCEA ,  Lin XU ,  Justin Charles CANNIFF ,  Simon GOSSELIN

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01L21/67069 ,  H01J37/32467 ,  H01J37/32807 ,  H01J2237/3341 ,  H01J37/321

Abstract: A component for use in a plasma processing chamber is provided. The component comprises a component body. A plasma facing surface of the component body is adapted to face a plasma in the plasma processing chamber. The plasma facing surface comprises 1) a layer of silicon doped with a dopant wherein the dopant is at least one of carbon, boron, tungsten, molybdenum, and tantalum, wherein the dopant has a concentration that ranges from 0.01% to 50% by mole percentage, or 2) a layer of carbon doped with a dopant wherein the dopant is at least one of silicon, boron, tungsten, molybdenum, and tantalum, wherein the dopant has a concentration that ranges from 0.01% to 50% by mole percentage, or 3) a layer consisting essentially of boron, or 4) a layer consisting essentially of tantalum.

公开(公告)号：US20180005851A1

公开(公告)日：2018-01-04

申请号：US15201207

申请日：2016-07-01

Applicant: Lam Research Corporation

Inventor： Benson Q. TONG ,  Harmeet SINGH ,  John HOLLAND ,  Ryan BISE

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/677

CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32477 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32743 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/67748

Abstract: A chamber filler kit for balancing electric fields in a dielectric etch chamber is provided. A transport module filler comprises an electrical conductive body, an etch resistant surface, wherein the etch resistant surface comprises an inner curved surface, which matches a partial cylindrical bore of the etch chamber, and a wafer transport aperture, wherein the transport module filler fits into a transport aperture of the etch chamber. A transport module sealer plate is adapted to be mechanically and electrically connected to the partially cylindrical chamber body and the transport module filler. A bias housing filler is adapted to be mechanically and electrically connected to a bias housing wall and comprises a conductive body and an etch resistant surface, wherein the etch resistant surface comprises a curved surface, which matches the partial cylindrical bore.

公开(公告)号：US20230331633A1

公开(公告)日：2023-10-19

申请号：US18247724

申请日：2021-11-03

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Harmeet SINGH ,  Pankaj HAZARIKA ,  Satish SRINIVASAN ,  Robin KOSHY

IPC: C04B35/565 ,  H01J37/32 ,  C04B35/64

CPC classification number: C04B35/565 ,  H01J37/32642 ,  H01J37/3244 ,  C04B35/64 ,  H01J2237/334 ,  C04B2235/3826 ,  C04B2235/3821 ,  C04B2235/612 ,  C04B2235/666 ,  C04B2235/9669

Abstract: A method for making a component for use in a plasma processing chamber is provided. A non-oxide silicon containing powder composition is placed in a mold, wherein the non-oxide silicon containing powder composition consists essentially of a non-oxide silicon containing powder and at least one of a B or B4C dopant. The non-oxide silicon containing powder composition is subjected to spark plasma sintering (SPS) to form a spark plasma sintered component. The spark plasma sintered component is machined into a plasma processing chamber component.

公开(公告)号：US20150280113A1

公开(公告)日：2015-10-01

申请号：US14325190

申请日：2014-07-07

Applicant: Lam Research Corporation

Inventor： Samantha S.H. TAN ,  Wenbing YANG ,  Meihua SHEN ,  Richard P. JANEK ,  Jeffrey MARKS ,  Harmeet SINGH ,  Thorsten LILL

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/12 ,  C23F1/08 ,  C23F1/12 ,  C23F4/00 ,  H01L21/02554 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L45/1675

Abstract: A method for etching a stack with an Ru containing layer disposed below a hardmask and above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is etched with a dry etch. The Ru containing layer is etched, where the etching uses hypochlorite and/or O3 based chemistries. The MTJ stack is etched. The MTJ stack is capped with dielectric materials. The pinned layer is etched following the MTJ capping.

Abstract translation: 提供了一种用设置在硬掩模下方的Ru含量层和具有固定层的磁性隧道结（MTJ）堆叠以上的层的蚀刻方法。 用干蚀刻蚀刻硬掩模。 蚀刻含Ru层，其中蚀刻使用次氯酸盐和/或基于O 3的化学物质。 MTJ堆叠被蚀刻。 MTJ叠层用电介质材料盖住。 钉扎层在MTJ封盖之后进行蚀刻。

公开(公告)号：US20230274954A1

公开(公告)日：2023-08-31

申请号：US18013445

申请日：2021-08-02

Applicant: LAM RESEARCH CORPORATION

Inventor： Harmeet SINGH ,  Slobodan MITROVIC ,  Darrell EHRLICH ,  Benny WU

IPC: H01L21/67 ,  H05B3/28

CPC classification number: H01L21/67103 ,  H01L21/67248 ,  H05B3/283

Abstract: A substrate support assembly for supporting a substrate includes a baseplate, a ceramic plate arranged on the baseplate, and N resistive heaters arranged in X rows and Y columns and coupled to the ceramic plate. X, Y, and N are integers greater than 1, and N is less than or equal to X*Y. Each of the N resistive heaters have a first terminal and a second terminal. The ceramic plate includes Y conductors arranged in a first layer of the ceramic plate, and X conductors arranged in a second layer of the ceramic plate. The first terminals of each resistive heater in one of the X rows are directly connected to the Y conductors, respectively, by first vias. Second terminals of each resistive heater in the one of the X rows are directly connected to one of the X conductors by second vias.

公开(公告)号：US20180374712A1

公开(公告)日：2018-12-27

申请号：US15632163

申请日：2017-06-23

Applicant: Lam Research Corporation

Inventor： Joydeep GUHA ,  Sirish K. REDDY ,  Kaushik CHATTOPADHYAY ,  Thomas W. MOUNTSIER ,  Aaron EPPLER ,  Thorsten LILL ,  Vahid VAHEDI ,  Harmeet SINGH

IPC: H01L21/311 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/768

Abstract: A method for etching features in an OMOM stack with first layer of silicon oxide, a second layer of a metal containing material over the first layer, a third layer of silicon oxide over the second layer, and a fourth layer of a metal containing material over the third layer is provided. A hardmask is formed over the stack. The hardmask is patterned. The OMOM stack is etched through the hardmask.

公开(公告)号：US20150303085A1

公开(公告)日：2015-10-22

申请号：US14255730

申请日：2014-04-17

Applicant: Lam Research Corporation

Inventor： Dean J. LARSON ,  Jason AUGUSTINO ,  Andreas FISCHER ,  Andre W. DESEPTE ,  Harmeet SINGH

IPC: H01L21/673 ,  H01L21/687

CPC classification number: H01L21/68785 ,  H01L21/6719

Abstract: A processing chamber having a chamber housing with a top and sidewalls is provided. The processing chamber has a seal for connecting the sidewalls of the chamber housing to a top of a lower chamber below the processing chamber. A substrate holder is attached to the sidewalls of the chamber housing. Further, a wafer lift ring supported by a side arm extending through the sidewalls has at least three posts each having at least one finger, the top of the fingers defining a first wafer handoff plane. The lower chamber has at least one lowest wafer support that defines a second wafer handoff plane where the height between the first wafer handoff plane and the second wafer handoff plane is not greater than a maximum vertical stroke of a transfer arm that is configured to transfer a wafer from the first wafer handoff plane and the second wafer handoff plane.

Abstract translation: 提供具有具有顶部和侧壁的腔室壳体的处理室。 处理室具有用于将室壳体的侧壁连接到处理室下方的下室的顶部的密封件。 衬底保持器附接到腔室壳体的侧壁。 此外，由侧壁延伸穿过侧壁支撑的晶片提升环具有至少三个柱，每个至少有一个手指，手指的顶部限定第一晶片切换平面。 下室具有限定第二晶片切换平面的至少一个最低的晶片支撑件，其中第一晶片切换平面和第二晶片切换平面之间的高度不大于传输臂的最大垂直冲程，其被配置为传送 晶片从第一晶片切换平面和第二晶片切换平面。