Invention Application
US20150087156A1 ETCHING METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND SEMICONDUCTOR DEVICE USING THE SAME, AS WELL AS KIT FOR PREPARATION OF ETCHING LIQUID
审中-公开
蚀刻方法和使用其制造半导体衬底产品和半导体器件的方法，以及作为用于制备蚀刻液体的工具包
- Patent Title: ETCHING METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND SEMICONDUCTOR DEVICE USING THE SAME, AS WELL AS KIT FOR PREPARATION OF ETCHING LIQUID
- Patent Title (中): 蚀刻方法和使用其制造半导体衬底产品和半导体器件的方法，以及作为用于制备蚀刻液体的工具包
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Application No.: US14558838Application Date: 2014-12-03
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Publication No.: US20150087156A1Publication Date: 2015-03-26
- Inventor: Tetsuya KAMIMURA , Tadashi INABA , Naotsugu MURO , Yoshinori NISHIWAKI
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2012-161905 20120720
- Main IPC: H01L21/306
- IPC: H01L21/306 ; C09K13/00
Abstract:
A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and then applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate.
Information query
IPC分类:
