公开(公告)号：US20240400942A1

公开(公告)日：2024-12-05

申请号：US18799123

申请日：2024-08-09

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: C11D3/30 ,  C11D3/00 ,  C11D3/43

Abstract: An object of the present invention is to provide a cleaning composition and a cleaning method of a semiconductor substrate, in which suppression property of surface roughness of a metal part in a substrate is excellent, removability of organic residues is excellent, and removability of inorganic residues is excellent. The cleaning composition of the present invention is a cleaning composition used for cleaning a substrate which has been subjected to a chemical mechanical polishing treatment, the cleaning composition containing an amine compound, an anticorrosion agent, an organic solvent, and water, in which the amine compound includes at least one compound X selected from the group consisting of a tertiary amine compound in which a pKa of a conjugate acid is 8.0 or more and a quaternary ammonium salt compound containing a quaternary ammonium cation having a total number of carbon atoms of 5 or more.

公开(公告)号：US20230087746A1

公开(公告)日：2023-03-23

申请号：US17957408

申请日：2022-09-30

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Masahiro Yoshidome ,  Yukihisa Kawada

IPC: B01D37/04 ,  B01J47/014 ,  B01D27/00 ,  B01D39/16 ,  B01D53/46 ,  B01J31/00 ,  B01J31/06 ,  B01D19/04

Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

公开(公告)号：US20220336209A1

公开(公告)日：2022-10-20

申请号：US17849126

申请日：2022-06-24

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: H01L21/02 ,  B08B3/04 ,  C11D3/30 ,  C11D3/00 ,  C11D3/20 ,  C11D3/28 ,  C11D7/26 ,  C11D3/39

Abstract: An object of the invention is to provide a method of cleaning semiconductor substrates that is excellent in abrasive particle removing performance with respect to semiconductor substrates having undergone CMP, as well as a cleaning liquid for semiconductor substrates having undergone CMP. The invention provides a method of cleaning semiconductor substrates, the method comprising a cleaning step of cleaning, by use of a cleaning liquid, a semiconductor substrate having undergone CMP using a polishing liquid containing abrasive particles. The semiconductor substrate contains metal, and the cleaning liquid has a pH of more than 7 at 25° C. The cleaning liquid comprises: a chelating agent; a specific component A; and an anticorrosive. The method satisfies Condition 1 that a product of a contact angle ratio obtained by a specific test method 1 and a specific degree of agglomeration obtained by a specific test method 2 is not more than 15.

公开(公告)号：US20220179320A1

公开(公告)日：2022-06-09

申请号：US17676235

申请日：2022-02-21

Applicant: FUJIFILM Corporation

Inventor： Tetsuya SHIMIZU ,  Tetsuya KAMIMURA

IPC: G03F7/32 ,  G03F7/30 ,  G03F7/16 ,  G03F7/40 ,  H01L21/027 ,  B65D25/14 ,  B65D85/00 ,  H01L21/308

Abstract: A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores the treatment liquid, wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.

公开(公告)号：US20220106499A1

公开(公告)日：2022-04-07

申请号：US17553811

申请日：2021-12-17

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: C09G1/02 ,  H01L21/304

Abstract: An object of the present invention is to provide a polishing liquid which reduces the occurrence of dishing on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished. In addition, another object of the present invention is to provide a chemical mechanical polishing method using the above-mentioned polishing liquid.
The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, including colloidal silica, a nitrogen-containing aromatic heterocycle, and hydrogen peroxide, in which at least a specific nitrogen-containing aromatic heterocyclic compound (1), a specific nitrogen-containing aromatic heterocyclic compound (2) different from the nitrogen-containing aromatic heterocyclic compound (1) are included as the nitrogen-containing aromatic heterocyclic compound.

公开(公告)号：US20200319559A1

公开(公告)日：2020-10-08

申请号：US16910250

申请日：2020-06-24

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: G03F7/32 ,  C08F220/68 ,  G03F7/11

Abstract: An object of the present invention is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by EUV exposure. Another object thereof is to provide a method for producing a liquid chemical. The liquid chemical of the present invention includes an organic solvent; Fe nanoparticles containing a Fe atom and having a particle size of 0.5 to 17 nm; and Pb nanoparticles containing a Pb atom and having a particle size of 0.5 to 17 nm, in which a ratio of the number of the Fe nanoparticles contained to the number of the Pb nanoparticles contained is 1.0 to 1.0×104, based on the number of the particles per unit volume of the liquid chemical.

公开(公告)号：US20190227440A1

公开(公告)日：2019-07-25

申请号：US16370279

申请日：2019-03-29

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  H01L21/768 ,  H01L21/311 ,  H01L21/32 ,  H01L21/321 ,  H01L21/027

Abstract: The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.

公开(公告)号：US20190177670A1

公开(公告)日：2019-06-13

申请号：US16278868

申请日：2019-02-19

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: C11D11/00 ,  H01L21/308 ,  H01L21/304 ,  H01L21/768 ,  H01L21/3065 ,  C11D3/43 ,  C11D3/28 ,  C11D3/04 ,  C11D3/20 ,  C11D3/37 ,  C11D1/34

Abstract: A treatment liquid is a treatment liquid for a semiconductor device, and contains a fluorine-containing compound and a metal ion.

公开(公告)号：US20170269270A1

公开(公告)日：2017-09-21

申请号：US15614742

申请日：2017-06-06

Applicant: FUJIFILM Corporation

Inventor： Yoshinori TAGUCHI ,  Tetsuya KAMIMURA ,  Akiko YOSHII

IPC: G02B5/22 ,  G03F7/032 ,  C09B29/33 ,  C08G18/32 ,  G03F7/038 ,  C08G18/34 ,  G03F7/004 ,  C09B57/04

CPC classification number: G02B5/223 ,  C08G18/284 ,  C08G18/329 ,  C08G18/348 ,  C08G18/8116 ,  C09B29/33 ,  C09B57/04 ,  C09B67/0033 ,  C09B67/0034 ,  G02F1/133514 ,  G03F7/0007 ,  G03F7/004 ,  G03F7/032 ,  G03F7/033 ,  G03F7/0388 ,  G03F7/105

Abstract: A coloring composition includes Color Index Pigment Red 264, a graft resin having an acid group, a photopolymerizable compound, and a photopolymerization initiator.

公开(公告)号：US20160254139A1

公开(公告)日：2016-09-01

申请号：US15152676

申请日：2016-05-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Yasuo SUGISHIMA ,  Atsushi MIZUTANI

IPC: H01L21/02 ,  B08B3/08 ,  B08B7/00 ,  C11D7/26 ,  B08B3/04 ,  B08B3/10 ,  C11D11/00 ,  C11D7/32 ,  H01L21/3105 ,  B08B9/00

CPC classification number: H01L21/02057 ,  B08B3/041 ,  B08B3/08 ,  B08B3/10 ,  B08B7/0035 ,  B08B9/00 ,  C11D3/0073 ,  C11D3/3719 ,  C11D3/3723 ,  C11D3/3773 ,  C11D3/3776 ,  C11D7/261 ,  C11D7/265 ,  C11D7/267 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/823814 ,  H01L21/823857

Abstract: Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the Ge-containing layer.

Abstract translation: 提供一种半导体衬底处理液，其从具有包含锗（Ge）的Ge含量层的半导体衬底或其表面清除半导体衬底的顶部上的有机材料，并且处理液体包括液体化学组分 其将处理液的pH调节至5〜16的范围，以及用于防止含Ge层的防腐蚀成分。