发明申请
US20150092488A1 FLASH MEMORY SYSTEM ENDURANCE IMPROVEMENT USING TEMPERATURE BASED NAND SETTINGS
审中-公开
使用基于温度的NAND设置的闪存存储系统耐久性改进
- 专利标题： FLASH MEMORY SYSTEM ENDURANCE IMPROVEMENT USING TEMPERATURE BASED NAND SETTINGS
- 专利标题（中）： 使用基于温度的NAND设置的闪存存储系统耐久性改进
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申请号： US14040239申请日： 2013-09-27
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公开(公告)号： US20150092488A1公开(公告)日： 2015-04-02
- 发明人: Yogesh Wakchaure , Kiran Pangal , Xin Guo
- 申请人： Yogesh Wakchaure , Kiran Pangal , Xin Guo
- 主分类号： G11C16/34
- IPC分类号： G11C16/34 ; G11C16/10 ; G11C16/26
摘要：
Methods and apparatus to improve flash memory system endurance using temperature based flash memory settings are described. In one embodiment, memory controller logic applies one of a first trim profile or a second trim profile to a flash memory storage device based at least partially on a comparison of a threshold temperature value and a sensed temperature of the flash memory storage device. Other embodiments are also disclosed and claimed.
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