Invention Application
US20150093869A1 DOUBLE GATED 4F2 DRAM CHC CELL AND METHODS OF FABRICATING THE SAME
有权
双环4F2 DRAM CHC电池及其制造方法
- Patent Title: DOUBLE GATED 4F2 DRAM CHC CELL AND METHODS OF FABRICATING THE SAME
- Patent Title (中): 双环4F2 DRAM CHC电池及其制造方法
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Application No.: US14567445Application Date: 2014-12-11
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Publication No.: US20150093869A1Publication Date: 2015-04-02
- Inventor: Werner Juengling , Howard C. Kirsch
- Applicant: Micron Technology, Inc.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L21/762 ; H01L29/08
Abstract:
A semiconductor device is provided that includes a fin having a first gate and a second gate formed on a first sidewall of the fin in a first trench, wherein the first gate is formed above the second gate. The device includes a third gate and a fourth gate formed on a second sidewall of the fin in a second trench, wherein the third gate is formed above the fourth gate. Methods of manufacturing and operating the device are also included. A method of operation may include biasing the first gate and the fourth gate to create a current path across the fin.
Public/Granted literature
- US09472461B2 Double gated 4F2 dram CHC cell and methods of fabricating the same Public/Granted day:2016-10-18
Information query
IPC分类:
