Invention Application
US20150093889A1 METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES IN THE FABRICATION OF INTEGRATED CIRCUITS
审中-公开
用于从集成电路制造中除去母体硫化物的氧化铝层的方法
- Patent Title: METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES IN THE FABRICATION OF INTEGRATED CIRCUITS
- Patent Title (中): 用于从集成电路制造中除去母体硫化物的氧化铝层的方法
-
Application No.: US14044376Application Date: 2013-10-02
-
Publication No.: US20150093889A1Publication Date: 2015-04-02
- Inventor: Bin Yang , Abhijit Pethe , Albert Lee , Amol Joshi , Ashish Bodke , Kevin Kashefi , Salil Mujumdar
- Applicant: Intermolecular , GLOBALFOUNDRIES, Inc.
- Applicant Address: US CA San Jose KY Grand Cayman
- Assignee: Intermolecular,GLOBALFOUNDRIES, Inc.
- Current Assignee: Intermolecular,GLOBALFOUNDRIES, Inc.
- Current Assignee Address: US CA San Jose KY Grand Cayman
- Main IPC: H01L29/51
- IPC: H01L29/51
Abstract:
Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a GeOx layer formed thereon having a first thickness, removing a portion of the GeOx layer by exposing the semiconductor substrate to a hydrogen-plasma dry etch so as to reduce the first thickness of the GeOx layer to a second thickness, and depositing a high-k material over the GeOx layer of the semiconductor substrate.
Information query
IPC分类:
