发明申请
US20150103597A1 NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF NONVOLATILE MEMORY SYSTEM
有权
非易失性存储器件，非易失性存储器系统，包括非易失性存储器件以及非易失性存储器系统的操作方法
- 专利标题： NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF NONVOLATILE MEMORY SYSTEM
- 专利标题（中）： 非易失性存储器件，非易失性存储器系统，包括非易失性存储器件以及非易失性存储器系统的操作方法
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申请号： US14467920申请日： 2014-08-25
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公开(公告)号： US20150103597A1公开(公告)日： 2015-04-16
- 发明人: HYUN-WOOK PARK , KITAE PARK , JAEYONG JEONG
- 申请人： HYUN-WOOK PARK , KITAE PARK , JAEYONG JEONG
- 优先权： KR10-2013-0123449 20131016
- 主分类号： G11C16/16
- IPC分类号： G11C16/16 ; G11C16/04
摘要：
An method of operating a memory system including a plurality of memory cells includes changing an operation mode at least some of the memory cells which operate based on a first operation mode to operate based on a second operation mode; and performing a change erase operation on the memory cells for which an operation mode is changed on the basis of a change erase condition when the operation mode is changed. When memory cells operate in the first operation mode, a normal erase operation is performed based on a first erase condition, and when memory cells operate in the second operation mode, a normal erase operation is performed based on a second erase condition. The change erase condition is different from at least one of the first and second erase conditions.
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