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    NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF NONVOLATILE MEMORY SYSTEM
    2.
    发明申请
    NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF NONVOLATILE MEMORY SYSTEM 有权
    非易失性存储器件，非易失性存储器系统，包括非易失性存储器件以及非易失性存储器系统的操作方法

    公开(公告)号：US20150103597A1

    公开(公告)日：2015-04-16

    申请号：US14467920

    申请日：2014-08-25

    申请人： HYUN-WOOK PARK ,  KITAE PARK ,  JAEYONG JEONG

    发明人： HYUN-WOOK PARK ,  KITAE PARK ,  JAEYONG JEONG

    IPC分类号： G11C16/16 ,  G11C16/04

    CPC分类号： G11C16/14 ,  G11C11/56 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3445

    摘要： An method of operating a memory system including a plurality of memory cells includes changing an operation mode at least some of the memory cells which operate based on a first operation mode to operate based on a second operation mode; and performing a change erase operation on the memory cells for which an operation mode is changed on the basis of a change erase condition when the operation mode is changed. When memory cells operate in the first operation mode, a normal erase operation is performed based on a first erase condition, and when memory cells operate in the second operation mode, a normal erase operation is performed based on a second erase condition. The change erase condition is different from at least one of the first and second erase conditions.

    摘要翻译： 一种操作包括多个存储器单元的存储器系统的方法包括：根据第二操作模式，改变基于第一操作模式操作的至少一些存储器单元的操作模式; 并且当操作模式改变时，基于改变擦除条件，对在其中改变操作模式的存储单元执行改变擦除操作。 当存储单元在第一操作模式下工作时，基于第一擦除条件执行正常擦除操作，并且当存储器单元在第二操作模式下操作时，基于第二擦除条件执行正常擦除操作。 改变擦除条件不同于第一和第二擦除条件中的至少一个。

    NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAM VERIFYING THE SAME
    4.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAM VERIFYING THE SAME 有权
    非易失性存储器件及其验证方法

    公开(公告)号：US20150036426A1

    公开(公告)日：2015-02-05

    申请号：US14284031

    申请日：2014-05-21

    申请人： DONGHUN KWAK ,  HYUN-WOOK PARK ,  KITAE PARK

    发明人： DONGHUN KWAK ,  HYUN-WOOK PARK ,  KITAE PARK

    IPC分类号： G11C16/10 ,  G11C16/34 ,  G11C16/26

    CPC分类号： G11C16/3459 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26

    摘要： A program method of a three-dimensional nonvolatile memory device is provided which includes executing at least one program loop including an operation of programming selected memory cells of a selected string turned on by a selected string selection transistor and an operation of verifying whether programming of the memory cells is passed; and applying a negative counter voltage to a selected word line connected to the selected memory cells of the selected string at least once during an interval of the verify operation where there are turned on string selection transistors of unselected strings connected through the same bit line as that of the selected string.

    摘要翻译： 提供了一种三维非易失性存储器件的编程方法，包括执行至少一个程序循环，该程序循环包括对由所选择的字符串选择晶体管导通的所选字符串的选定存储单元进行编程的操作，以及验证是否对 记忆细胞通过; 以及在验证操作的间隔期间至少一次将连接到所选字符串的所选择的存储单元的选定字线施加负的反电压，其中通过与该相同的位线连接的未选择的串连接的串选择晶体管， 的选定字符串。

    STORAGE DEVICE AND A WRITE METHOD THEREOF
    5.
    发明申请
    STORAGE DEVICE AND A WRITE METHOD THEREOF 有权
    存储设备及其写入方法

    公开(公告)号：US20150003152A1

    公开(公告)日：2015-01-01

    申请号：US14188889

    申请日：2014-02-25

    申请人： DongHun KWAK ,  Dongkyo SHIM ,  KITAE PARK ,  Hyun-Wook PARK

    发明人： DongHun KWAK ,  Dongkyo SHIM ,  KITAE PARK ,  Hyun-Wook PARK

    IPC分类号： G11C16/12

    CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3459 ,  G11C16/349 ,  G11C16/3495

    摘要： A write method of a storage device includes determining whether to perform a coarse program operation based on information about memory cells of a memory device, in response to a determination that the coarse program operation is to be performed, programming data in the memory device by performing the coarse program operation and a fine program operation, and in response to a determination that the coarse program operation is not to be performed, programming data in the memory device by performing the fine program operation.

    摘要翻译： 存储装置的写入方法包括响应于要执行粗略编程操作的确定，基于关于存储器件的存储器单元的信息来确定是否执行粗略的程序操作，通过执行存储器件中的程序数据 粗程序操作和精细程序操作，并且响应于不执行粗程序操作的确定，通过执行精细程序操作来在存储器件中编程数据。

    MEMORY SYSTEM COMPRISING NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF
    6.
    发明申请
    MEMORY SYSTEM COMPRISING NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF 有权
    包含非易失性存储器件的存储器系统及其程序方法

    公开(公告)号：US20140219020A1

    公开(公告)日：2014-08-07

    申请号：US14161886

    申请日：2014-01-23

    申请人： DONGHUN KWAK ,  KITAE PARK

    发明人： DONGHUN KWAK ,  KITAE PARK

    IPC分类号： G11C16/10

    CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/22

    摘要： A memory system includes a nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device such that memory cells connected with a selected row of the nonvolatile memory device are programmed by one of a first program mode and a second program mode. At the first program mode, a plurality of logical pages corresponding in number to a maximum page number is stored at the memory cells, and at the second program mode, one or more logical pages the number of which is less than the maximum page number are stored at the memory cells using a bias condition that is different from that used in the first program mode.

    摘要翻译： 存储器系统包括非易失性存储器设备和配置成控制非易失性存储器件的存储器控​​制器，使得与非易失性存储器件的选定行连接的存储单元通过第一程序模式和第二程序模式之一进行编程。 在第一编程模式下，存储器单元中存储有多个对应于最大页号的逻辑页，并且在第二编程模式下，一个或多个逻辑页数小于最大页数， 使用与第一程序模式中使用的偏差条件不同的偏置条件存储在存储器单元。