发明申请
- 专利标题： Noise Decoupling Structure with Through-Substrate Vias
- 专利标题（中）： 噪声去耦结构与通孔通孔
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申请号： US14577825申请日： 2014-12-19
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公开(公告)号： US20150104925A1公开(公告)日： 2015-04-16
- 发明人: Chia-Chung Chen , Chewn-Pu Jou , Sally Liu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/768 ; H01L23/66 ; H01L21/762
摘要：
A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate.
公开/授权文献
- US09425154B2 Noise decoupling structure with through-substrate vias 公开/授权日：2016-08-23
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