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公开(公告)号：US20150104925A1
公开(公告)日：2015-04-16
申请号：US14577825
申请日：2014-12-19
发明人： Chia-Chung Chen , Chewn-Pu Jou , Sally Liu
IPC分类号： H01L29/06 , H01L21/768 , H01L23/66 , H01L21/762
CPC分类号： H01L23/66 , H01L21/76224 , H01L21/76898 , H01L23/481 , H01L23/585 , H01L29/0619 , H01L2223/6616 , H01L2223/6666 , H01L2924/0002 , H01L2924/00
摘要： A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate.
摘要翻译： 一种装置包括具有前表面和后表面的基板; 在基板的前表面上的集成电路器件; 以及在所述基板的背面上的金属板，其中，所述金属板与所述集成电路器件的整体重叠。 保护环延伸到基板中并且环绕集成电路装置。 保护环由导电材料形成。 贯穿基板通孔（TSV）穿透基板并与金属板电耦合。
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公开(公告)号：US09425154B2
公开(公告)日：2016-08-23
申请号：US14577825
申请日：2014-12-19
发明人： Chia-Chung Chen , Chewn-Pu Jou , Sally Liu
IPC分类号： H01L23/66 , H01L23/58 , H01L21/762 , H01L21/768 , H01L29/06
CPC分类号： H01L23/66 , H01L21/76224 , H01L21/76898 , H01L23/481 , H01L23/585 , H01L29/0619 , H01L2223/6616 , H01L2223/6666 , H01L2924/0002 , H01L2924/00
摘要： A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate.
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公开(公告)号：US09373673B2
公开(公告)日：2016-06-21
申请号：US14719115
申请日：2015-05-21
发明人： Hsiao-Tsung Yen , Chin-Wei Kuo , Hsien-Pin Hu , Sally Liu , Ming-Fa Chen , Jhe-Ching Lu
IPC分类号： H01L49/02 , H01F17/00 , H01L23/498 , H01L23/522 , H01L23/64 , H01F27/28 , H01L21/283 , H01L23/00
CPC分类号： H01L28/10 , H01F17/0006 , H01F27/2804 , H01L21/283 , H01L23/49816 , H01L23/49827 , H01L23/5227 , H01L23/645 , H01L24/16 , H01L2224/0401 , H01L2224/05572 , H01L2224/16225 , H01L2924/00014 , H01L2924/01322 , H01L2924/12042 , H01L2924/15311 , H01L2224/05552 , H01L2924/00
摘要： In accordance with an embodiment, a semiconductor device comprises a semiconductor die, an interposer, and conductive bumps bonding the semiconductor die to the interposer. The semiconductor die comprises a first metallization layer, and the first metallization layer comprises a first conductive pattern. The interposer comprises a second metallization layer, and the second metallization layer comprises a second conductive pattern. Some of the conductive bumps electrically couple the first conductive pattern to the second conductive pattern to form a coil. Other embodiments contemplate other configurations of coils, inductors, and/or transformers, and contemplate methods of manufacture.
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公开(公告)号：US20150255531A1
公开(公告)日：2015-09-10
申请号：US14719115
申请日：2015-05-21
发明人： Hsiao-Tsung Yen , Chin-Wei Kuo , Hsien-Pin Hu , Sally Liu , Ming-Fa Chen , Jhe-Ching Lu
IPC分类号： H01L49/02 , H01L21/283
CPC分类号： H01L28/10 , H01F17/0006 , H01F27/2804 , H01L21/283 , H01L23/49816 , H01L23/49827 , H01L23/5227 , H01L23/645 , H01L24/16 , H01L2224/0401 , H01L2224/05572 , H01L2224/16225 , H01L2924/00014 , H01L2924/01322 , H01L2924/12042 , H01L2924/15311 , H01L2224/05552 , H01L2924/00
摘要： In accordance with an embodiment, a semiconductor device comprises a semiconductor die, an interposer, and conductive bumps bonding the semiconductor die to the interposer. The semiconductor die comprises a first metallization layer, and the first metallization layer comprises a first conductive pattern. The interposer comprises a second metallization layer, and the second metallization layer comprises a second conductive pattern. Some of the conductive bumps electrically couple the first conductive pattern to the second conductive pattern to form a coil. Other embodiments contemplate other configurations of coils, inductors, and/or transformers, and contemplate methods of manufacture.
摘要翻译： 根据实施例，半导体器件包括半导体管芯，插入件和将半导体管芯接合到插入件的导电凸块。 半导体管芯包括第一金属化层，第一金属化层包括第一导电图案。 插入器包括第二金属化层，并且第二金属化层包括第二导电图案。 一些导电凸块将第一导电图案电耦合到第二导电图案以形成线圈。 其他实施例考虑了线圈，电感器和/或变压器的其他配置，并考虑了制造方法。
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公开(公告)号：US20140374875A1
公开(公告)日：2014-12-25
申请号：US13925558
申请日：2013-06-24
发明人： Hsiao-Tsung Yen , Chin-Wei Kuo , Hsien-Pin Hu , Sally Liu , Ming-Fa Chen , Jhe-Ching Lu
IPC分类号： H01L49/02
CPC分类号： H01L28/10 , H01F17/0006 , H01F27/2804 , H01L21/283 , H01L23/49816 , H01L23/49827 , H01L23/5227 , H01L23/645 , H01L24/16 , H01L2224/0401 , H01L2224/05572 , H01L2224/16225 , H01L2924/00014 , H01L2924/01322 , H01L2924/12042 , H01L2924/15311 , H01L2224/05552 , H01L2924/00
摘要： In accordance with an embodiment, a semiconductor device comprises a semiconductor die, an interposer, and conductive bumps bonding the semiconductor die to the interposer. The semiconductor die comprises a first metallization layer, and the first metallization layer comprises a first conductive pattern. The interposer comprises a second metallization layer, and the second metallization layer comprises a second conductive pattern. Some of the conductive bumps electrically couple the first conductive pattern to the second conductive pattern to form a coil. Other embodiments contemplate other configurations of coils, inductors, and/or transformers, and contemplate methods of manufacture.
摘要翻译： 根据实施例，半导体器件包括半导体管芯，插入件和将半导体管芯接合到插入件的导电凸块。 半导体管芯包括第一金属化层，第一金属化层包括第一导电图案。 插入器包括第二金属化层，并且第二金属化层包括第二导电图案。 一些导电凸块将第一导电图案电耦合到第二导电图案以形成线圈。 其他实施例考虑了线圈，电感器和/或变压器的其他配置，并考虑了制造方法。
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公开(公告)号：US09059026B2
公开(公告)日：2015-06-16
申请号：US13925558
申请日：2013-06-24
发明人： Hsiao-Tsung Yen , Chin-Wei Kuo , Hsien-Pin Hu , Sally Liu , Ming-Fa Chen , Jhe-Ching Lu
IPC分类号： H01L49/02
CPC分类号： H01L28/10 , H01F17/0006 , H01F27/2804 , H01L21/283 , H01L23/49816 , H01L23/49827 , H01L23/5227 , H01L23/645 , H01L24/16 , H01L2224/0401 , H01L2224/05572 , H01L2224/16225 , H01L2924/00014 , H01L2924/01322 , H01L2924/12042 , H01L2924/15311 , H01L2224/05552 , H01L2924/00
摘要： In accordance with an embodiment, a semiconductor device comprises a semiconductor die, an interposer, and conductive bumps bonding the semiconductor die to the interposer. The semiconductor die comprises a first metallization layer, and the first metallization layer comprises a first conductive pattern. The interposer comprises a second metallization layer, and the second metallization layer comprises a second conductive pattern. Some of the conductive bumps electrically couple the first conductive pattern to the second conductive pattern to form a coil. Other embodiments contemplate other configurations of coils, inductors, and/or transformers, and contemplate methods of manufacture.
摘要翻译： 根据实施例，半导体器件包括半导体管芯，插入件和将半导体管芯接合到插入件的导电凸块。 半导体管芯包括第一金属化层，第一金属化层包括第一导电图案。 插入器包括第二金属化层，并且第二金属化层包括第二导电图案。 一些导电凸块将第一导电图案电耦合到第二导电图案以形成线圈。 其他实施例考虑了线圈，电感器和/或变压器的其他配置，并考虑了制造方法。
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