发明申请
US20150107640A1 IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX
审中-公开
V-VI矩阵中的IV-VI和III-V量子点结构
- 专利标题： IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX
- 专利标题（中）： V-VI矩阵中的IV-VI和III-V量子点结构
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申请号： US14517345申请日： 2014-10-17
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公开(公告)号： US20150107640A1公开(公告)日： 2015-04-23
- 发明人: James Christopher Caylor , Ian Patrick Wellenius , William O. Charles , Pablo Cantu , Allen L. Gray
- 申请人： Phononic Devices, Inc.
- 主分类号： H01L35/16
- IPC分类号： H01L35/16 ; H01L35/34 ; H01L35/18
摘要：
A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved.
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