IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX
    1.
    发明申请
    IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX 审中-公开
    V-VI矩阵中的IV-VI和III-V量子点结构

    公开(公告)号:US20150107640A1

    公开(公告)日:2015-04-23

    申请号:US14517345

    申请日:2014-10-17

    IPC分类号: H01L35/16 H01L35/34 H01L35/18

    CPC分类号: H01L35/16 H01L35/26 H01L35/34

    摘要: A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved.

    摘要翻译: 公开了一种热电材料及其制造方法。 通常,该热电材料包含V-VI族主体材料中的V-VI族主体或基体材料以及III-V族或IV-VI族纳米结构。 通过将III-V族或IV-VI族纳米级纳入V-VI族主体材料中,可以提高热电材料的性能。