发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
- 专利标题（中）： 半导体器件和显示器件
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申请号： US13996033申请日： 2011-12-15
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公开(公告)号： US20150108467A1公开(公告)日： 2015-04-23
- 发明人: Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi , Hiroshi Matsukizono
- 申请人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi , Hiroshi Matsukizono
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Osaka-shi, Osaka
- 优先权： JP2010-282919 20101220
- 国际申请： PCT/JP2011/079036 WO 20111215
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L27/12 ; H01L29/786
摘要：
A semiconductor device (100) according to the present invention is a semiconductor device with a thin-film transistor (10), and includes: a gate electrode (62) which has been formed on a substrate (60) as a part of the thin-film transistor (10); a gate insulating layer (66) which has been formed on the gate electrode (62); an oxide semiconductor layer (68) which has been formed on the gate insulating layer (66); a source electrode (70s) and a drain electrode (70d) which have been formed on the oxide semiconductor layer (68); a protective layer (72) which has been formed on the oxide semiconductor layer (68), the source electrode (70s) and the drain electrode (70d); an oxygen supplying layer (74) which has been formed on the protective layer (72); and an anti-diffusion layer (78) which has been formed on the oxygen supplying layer (74).
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