发明申请
US20150132883A1 PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND THE MANUFACTURING METHOD THEREOF 审中-公开
隧道场效应晶体管的照相检测器及其制造方法

PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND THE MANUFACTURING METHOD THEREOF
摘要:
The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
信息查询
0/0