发明申请
- 专利标题: DEFECT MANAGEMENT POLICIES FOR NAND FLASH MEMORY
- 专利标题(中): NAND FLASH存储器的缺陷管理策略
-
申请号: US14087282申请日: 2013-11-22
-
公开(公告)号: US20150149818A1公开(公告)日: 2015-05-28
- 发明人: Pranav Kalavade , Feng Zhu , Shyam Sunder Raghunathan , Ravi H. Motwani
- 申请人: Pranav Kalavade , Feng Zhu , Shyam Sunder Raghunathan , Ravi H. Motwani
- 主分类号: G06F11/20
- IPC分类号: G06F11/20
摘要:
Systems and methods of managing defects in nonvolatile storage systems that can be used to avoid an inadvertent loss of data, while maintaining as much useful memory in the nonvolatile storage systems as possible. The disclosed systems and methods can monitor a plurality of trigger events for detecting possible defects in one or more nonvolatile memory (NVM) devices included in the nonvolatile storage systems, and apply one or more defect management policies to the respective NVM devices based on the types of trigger events that resulted in detection of the possible defects. Such defect management policies can be used proactively to retire memory in the nonvolatile storage systems with increased granularity, focusing the retirement of memory on regions of nonvolatile memory that are likely to contain a defect.
公开/授权文献
- US09535777B2 Defect management policies for NAND flash memory 公开/授权日:2017-01-03
信息查询