Provided herein is a metal chalcogenide thin film and a method for preparing the metal chalcogenide thin film, the method including forming a metal layer on a substrate; and forming a metal chalcogenide thin film by inserting the substrate into a chamber for low temperature vapor deposition, injecting a gas containing chalcogen atoms and an argon gas into the chamber, generating a plasma such that chalcogen atoms decomposed by the plasma chemically combine with metal atoms constituting the metal layer to form the metal chalcogenide thin film.