Invention Application
US20150162371A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
审中-公开
半导体器件,半导体器件的制造方法和电子器件
- Patent Title: SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
- Patent Title (中): 半导体器件,半导体器件的制造方法和电子器件
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Application No.: US14407198Application Date: 2013-06-11
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Publication No.: US20150162371A1Publication Date: 2015-06-11
- Inventor: Nobutoshi Fujii , Kenichi Aoyagi
- Applicant: SONY CORPORATION
- Priority: JP2012-141284 20120622
- International Application: PCT/JP2013/066090 WO 20130611
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/225

Abstract:
The present disclosure includes a first substrate including a first wiring layer having a first connection electrode projecting by a predetermined quantity from a first interlayer insulation film and a second wiring layer having a second connection electrode projecting by a predetermined quantity from a second interlayer insulation film. On a bonded surface between the first and second substrates, the first and second connection electrodes are joined with each other, and at the same time, at least a part of the first interlayer insulation film and a part of the second interlayer insulation film which face to each other in a lamination direction are joined with each other.
Information query
IPC分类: