Invention Application
US20150162371A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE 审中-公开
半导体器件,半导体器件的制造方法和电子器件

  • Patent Title: SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
  • Patent Title (中): 半导体器件,半导体器件的制造方法和电子器件
  • Application No.: US14407198
    Application Date: 2013-06-11
  • Publication No.: US20150162371A1
    Publication Date: 2015-06-11
  • Inventor: Nobutoshi FujiiKenichi Aoyagi
  • Applicant: SONY CORPORATION
  • Priority: JP2012-141284 20120622
  • International Application: PCT/JP2013/066090 WO 20130611
  • Main IPC: H01L27/146
  • IPC: H01L27/146 H04N5/225
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
Abstract:
The present disclosure includes a first substrate including a first wiring layer having a first connection electrode projecting by a predetermined quantity from a first interlayer insulation film and a second wiring layer having a second connection electrode projecting by a predetermined quantity from a second interlayer insulation film. On a bonded surface between the first and second substrates, the first and second connection electrodes are joined with each other, and at the same time, at least a part of the first interlayer insulation film and a part of the second interlayer insulation film which face to each other in a lamination direction are joined with each other.
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