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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11587857B2

    公开(公告)日：2023-02-21

    申请号：US15945579

    申请日：2018-04-04

    申请人： Sony Corporation

    发明人： Nobutoshi Fujii ,  Yoshihisa Kagawa

    IPC分类号： H01L27/146 ,  H01L23/498 ,  H01L23/522 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/532

    摘要： A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located closer to the first interlayer insulating film of the second interlayer insulating film, being disposed around the second electrode pad, and being bonded to the first dummy electrode. A second semiconductor device includes: a first semiconductor section including a first electrode, the first electrode being formed on a surface located closer to a bonding interface and extending in a first direction; and a second semiconductor section including a second electrode and disposed to be bonded to the first semiconductor section at the bonding interface, the second electrode being bonded to the first electrode and extending in a second direction that intersects with the first direction.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD 审中-公开

    公开(公告)号：US20180269248A1

    公开(公告)日：2018-09-20

    申请号：US15987278

    申请日：2018-05-23

    申请人： Sony Corporation

    发明人： Nobutoshi Fujii ,  Yoshiya Hagimoto ,  Kenichi Aoyagi ,  Yoshihisa Kagawa

    IPC分类号： H01L27/146 ,  H04N5/225 ,  H01L21/20 ,  H01L21/768

    摘要： A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

    SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE 审中-公开
    半导体器件，半导体器件的制造方法和电子器件

    公开(公告)号：US20150162371A1

    公开(公告)日：2015-06-11

    申请号：US14407198

    申请日：2013-06-11

    申请人： SONY CORPORATION

    发明人： Nobutoshi Fujii ,  Kenichi Aoyagi

    IPC分类号： H01L27/146 ,  H04N5/225

    CPC分类号： H01L27/14636 ,  H01L27/14634 ,  H01L27/14683 ,  H01L27/1469 ,  H04N5/2254

    摘要： The present disclosure includes a first substrate including a first wiring layer having a first connection electrode projecting by a predetermined quantity from a first interlayer insulation film and a second wiring layer having a second connection electrode projecting by a predetermined quantity from a second interlayer insulation film. On a bonded surface between the first and second substrates, the first and second connection electrodes are joined with each other, and at the same time, at least a part of the first interlayer insulation film and a part of the second interlayer insulation film which face to each other in a lamination direction are joined with each other.

    摘要翻译： 本公开内容包括：第一基板，包括具有从第一层间绝缘膜突出预定量的第一连接电极的第一布线层和具有从第二层间绝缘膜突出预定量的第二连接电极的第二布线层。 在第一和第二基板之间的接合表面上，第一和第二连接电极彼此接合，同时第一层间绝缘膜和第二层间绝缘膜的至少一部分面对 在层叠方向上彼此接合。