The invention provides an electrostatic discharge (ESD) protection device. The ESD protection device includes a semiconductor substrate having an active region, a first well region having a first conductive type formed in the active region, a first doped region having the first conductive type formed in the first well region, a first metal contact disposed on the first doped region, and a second metal contact disposed on the active region, connecting to the first well region, wherein no doped region is formed between the second metal contact and the first well region.