公开(公告)号：US20140203368A1

公开(公告)日：2014-07-24

申请号：US14108559

申请日：2013-12-17

Applicant: MediaTek Inc.

Inventor： Zheng ZENG ,  Ching-Chung KO ,  Bo-Shih HUANG

IPC: H01L27/02

CPC classification number: H01L29/0619 ,  H01L27/0255 ,  H01L29/0649 ,  H01L29/402 ,  H01L29/47 ,  H01L29/78 ,  H01L29/872

Abstract: The invention provides an electrostatic discharge (ESD) protection device. The ESD protection device includes a semiconductor substrate having an active region. A first well region having a first conductive type is formed in the active region. A first doped region having the first conductive type is formed in the first well region. A first metal contact is disposed on the first doped region. A second metal contact is disposed on the active region, connecting to the first well region. The first metal contact and a second metal contact are separated by a poly pattern or an insulating layer pattern disposed on the first well region.

Abstract translation: 本发明提供一种静电放电（ESD）保护装置。 ESD保护器件包括具有有源区的半导体衬底。 在有源区中形成具有第一导电类型的第一阱区。 具有第一导电类型的第一掺杂区形成在第一阱区中。 第一金属触点设置在第一掺杂区域上。 第二金属触点设置在有源区上，连接到第一阱区。 第一金属触点和第二金属触点被设置在第一阱区域上的多晶型图案或绝缘层图案分开。

公开(公告)号：US20160276274A1

公开(公告)日：2016-09-22

申请号：US15168519

申请日：2016-05-31

Applicant: MediaTek Inc.

Inventor： Ching-Chung KO ,  Tao CHENG ,  Tien-Yueh LIU ,  Ta-Hsi CHOU ,  Peng-Cheng KAO ,  Ling-Wei KE

IPC: H01L23/528 ,  H01L23/58 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L23/5286 ,  H01L21/823475 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/585 ,  H01L24/05 ,  H01L2224/05124 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/00

Abstract: An integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of first conductive layers embedded in respective said plurality of IMD layers, wherein said first conductive layers comprise copper; a first insulating layer overlying said plurality of IMD layers and said plurality of first conductive layers; at least a first wiring line in a second conductive layer overlying said first insulating layer, for distributing power signal or ground signal, wherein said second conductive layer comprise aluminum; and at least a second wiring line in a third conductive layer overlying said second conductive layer, for distributing power signal or ground signal.

Abstract translation: 集成电路芯片包括其上具有多个金属间电介质（IMD）层的半导体衬底和嵌入在所述多个IMD层中的多个第一导电层，其中所述第一导电层包括铜; 覆盖所述多个IMD层和所述多个第一导电层的第一绝缘层; 覆盖所述第一绝缘层的第二导电层中的至少第一布线，用于分配功率信号或接地信号，其中所述第二导电层包括铝; 以及覆盖所述第二导电层的第三导电层中的至少第二布线，用于分配电力信号或接地信号。

公开(公告)号：US20170200783A1

公开(公告)日：2017-07-13

申请号：US15469846

申请日：2017-03-27

Applicant: MediaTek Inc.

Inventor： Zheng ZENG ,  Ching-Chung KO ,  Bo-Shih HUANG

IPC: H01L29/06 ,  H01L29/872 ,  H01L29/78 ,  H01L27/02 ,  H01L29/47

CPC classification number: H01L29/0619 ,  H01L27/0255 ,  H01L29/0649 ,  H01L29/402 ,  H01L29/47 ,  H01L29/78 ,  H01L29/872

Abstract: The invention provides an electrostatic discharge (ESD) protection device formed by a Schottky diode. An exemplary embodiment of an ESD protection device comprises a semiconductor substrate having an active region. A first well region having a first conductive type is formed in the active region. A first heavily doped region having the first conductive type is formed in the first well region. A first metal contact is disposed on the first doped region. A second metal contact is disposed on the active region, connecting to the first well region without through any heavily doped region being located therebetween, wherein the first metal contact and the second metal contact are separated by a polysilicon pattern disposed on the first well region.

公开(公告)号：US20200373428A1

公开(公告)日：2020-11-26

申请号：US16853889

申请日：2020-04-21

Applicant: MEDIATEK INC.

Inventor： Jing-Chyi LIAO ,  Ching-Chung KO ,  Zheng ZENG

IPC: H01L29/78

Abstract: A semiconductor device structure is provided. A first well region with a first type of conductivity is formed over a semiconductor substrate. A second well region with a second type of conductivity is formed over the semiconductor substrate. A well region is formed over the semiconductor substrate and between the first and second well regions. A first gate structure is disposed on the well region and partially over the first and second well regions. A drain region is in the first well region. A source region and a bulk region are in the second well region. The drain region, the source region and the bulk region have the first type of conductivity. A second gate structure is disposed on the second well region, and separated from the first gate structure by the source region and the bulk region.

公开(公告)号：US20150171072A1

公开(公告)日：2015-06-18

申请号：US14630733

申请日：2015-02-25

Applicant: MediaTek Inc.

Inventor： Zheng ZENG ,  Ching-Chung KO ,  Bo-Shih HUANG

IPC: H01L27/02 ,  H01L29/47 ,  H01L29/872

CPC classification number: H01L29/0619 ,  H01L27/0255 ,  H01L29/0649 ,  H01L29/402 ,  H01L29/47 ,  H01L29/78 ,  H01L29/872

Abstract: The invention provides an electrostatic discharge (ESD) protection device. The ESD protection device includes a semiconductor substrate having an active region, a first well region having a first conductive type formed in the active region, a first doped region having the first conductive type formed in the first well region, a first metal contact disposed on the first doped region, and a second metal contact disposed on the active region, connecting to the first well region, wherein no doped region is formed between the second metal contact and the first well region.

Abstract translation: 本发明提供一种静电放电（ESD）保护装置。 ESD保护器件包括具有有源区的半导体衬底，在有源区中形成的具有第一导电类型的第一阱区，形成在第一阱区中的第一导电类型的第一掺杂区，设置在第一阱区上的第一金属触点 所述第一掺杂区域和设置在所述有源区上的第二金属触点连接到所述第一阱区域，其中在所述第二金属触点和所述第一阱区域之间没有形成掺杂区域。