Invention Application
- Patent Title: BUILT-IN BYPASS DIODE
- Patent Title (中): 内置旁路二极管
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Application No.: US14136719Application Date: 2013-12-20
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Publication No.: US20150179847A1Publication Date: 2015-06-25
- Inventor: Seung Bum Rim , David D. Smith
- Applicant: Seung Bum Rim , David D. Smith
- Main IPC: H01L31/042
- IPC: H01L31/042 ; H01L31/102 ; H01L31/18
Abstract:
A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.
Information query
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