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    Metallization of solar cells with differentiated P-type and N-type region architectures
    2.
    发明授权
    Metallization of solar cells with differentiated P-type and N-type region architectures 有权
    具有差异化P型和N型区域结构的太阳能电池的金属化

    公开(公告)号：US09502601B1

    公开(公告)日：2016-11-22

    申请号：US15089382

    申请日：2016-04-01

    Applicant: David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

    Inventor： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

    IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0216 ,  H01L31/0236

    CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/0745 ,  Y02E10/50

    Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

    Abstract translation: 描述了具有差异化的P型和N型区域结构的太阳能电池发射极区域的制造方法和所得的太阳能电池。 在一个示例中，背接触太阳能电池可以包括具有光接收表面和背面的基板。 第一导电类型的第一多晶硅发射极区域设置在设置在基板的背面上的第一薄介电层上。 具有第二不同导电类型的第二多晶硅发射极区域设置在设置在基板的背面上的第二薄介电层上。 第三薄介电层设置在第一多晶硅发射极区域的暴露的外部部分上，并且横向地设置在第一和第二多晶硅发射极区域之间。 第一导电接触结构设置在第一多晶硅发射极区域上。 第二导电接触结构设置在第二多晶硅发射极区域上。 还描述了金属化方法，包括用于形成第一和第二导电接触结构的蚀刻技术。

    SOLAR CELL EMITTER REGION FABRICATION USING SUBSTRATE-LEVEL ION IMPLANTATION
    3.
    发明申请
    SOLAR CELL EMITTER REGION FABRICATION USING SUBSTRATE-LEVEL ION IMPLANTATION 审中-公开
    太阳能电池区域制造使用基板级离子植入

    公开(公告)号：US20160284913A1

    公开(公告)日：2016-09-29

    申请号：US14672071

    申请日：2015-03-27

    Applicant: Staffan Westerberg ,  Timothy Weidman ,  David D. Smith

    Inventor： Staffan Westerberg ,  Timothy Weidman ,  David D. Smith

    IPC: H01L31/065 ,  H01L31/18 ,  H01L31/0224

    CPC classification number: H01L31/1864 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Methods of fabricating solar cell emitter regions using substrate-level ion implantation, and resulting solar cells, are described. In an example, a method of fabricating a solar cell involves forming a lightly doped region in a semiconductor substrate by ion implantation, the lightly doped region of a first conductivity type of a first concentration. The method also involves forming a first plurality of dopant regions of the first conductivity type of a second, higher, concentration by ion implantation, the first plurality of dopant regions overlapping with a first portion of the lightly doped region. The method also involves forming a second plurality of dopant regions by ion implantation, the second plurality of dopant regions having a second conductivity type of a concentration higher than the first concentration, and the second plurality of dopant regions overlapping with a second portion of the lightly doped region and alternating with but not overlapping the first plurality of dopant regions.

    Abstract translation: 描述了使用衬底级离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个实例中，制造太阳能电池的方法包括通过离子注入在半导体衬底中形成轻掺杂区域，即第一浓度的第一导电类型的轻掺杂区域。 该方法还包括通过离子注入形成第一导电类型的第一导电类型的第一多个掺杂区，第一多个掺杂区与轻掺杂区的第一部分重叠。 该方法还涉及通过离子注入形成第二多个掺杂剂区域，第二多个掺杂剂区域具有高于第一浓度的浓度的第二导电类型，并且第二多个掺杂剂区域与轻微的第二部分重叠 并且与第一多个掺杂区域交替而不重叠。

    SOLAR CELL EMITTER REGION FABRICATION USING ION IMPLANTATION
    6.
    发明申请
    SOLAR CELL EMITTER REGION FABRICATION USING ION IMPLANTATION 有权
    太阳能电池发射区使用离子植入制造

    公开(公告)号：US20150380599A1

    公开(公告)日：2015-12-31

    申请号：US14320438

    申请日：2014-06-30

    Applicant: David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

    Inventor： David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

    IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0368

    CPC classification number: H01L31/03685 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0288 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.

    Abstract translation: 描述了使用离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个示例中，背接触太阳能电池包括具有光接收表面和背表面的晶体硅衬底。 第一多晶硅发射极区域设置在晶体硅衬底之上。 第一多晶硅发射极区域掺杂有第一导电类型的掺杂剂杂质种类，并且还包括与第一导电类型的掺杂杂质种类不同的辅助杂质种类。 第二多晶硅发射极区域设置在晶体硅衬底之上并且与第一多晶硅发射极区域相邻但分离。 第二多晶硅发射极区掺杂有第二相反导电类型的掺杂杂质物质。 第一和第二导电接触结构分别电连接到第一和第二多晶硅发射极区域。

    BUILT-IN BYPASS DIODE
    7.
    发明申请
    BUILT-IN BYPASS DIODE 审中-公开
    内置旁路二极管

    公开(公告)号：US20150179847A1

    公开(公告)日：2015-06-25

    申请号：US14136719

    申请日：2013-12-20

    Applicant: Seung Bum Rim ,  David D. Smith

    Inventor： Seung Bum Rim ,  David D. Smith

    IPC: H01L31/042 ,  H01L31/102 ,  H01L31/18

    CPC classification number: H01L31/02167 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0443 ,  H01L31/0745 ,  Y02E10/50

    Abstract: A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.

    Abstract translation: 旁路二极管可以包括设置在太阳能电池的衬底上方的第一导电类型的第一导电区域和设置在第一导电区域上方的第二导电类型的第二导电区域。 旁路二极管可以包括直接设置在第一和第二导电区域之间的薄介电区域。

    Hybrid polysilicon heterojunction back contact cell
    9.
    发明授权
    Hybrid polysilicon heterojunction back contact cell 有权
    混合多晶异质结接触电池

    公开(公告)号：US08679889B2

    公开(公告)日：2014-03-25

    申请号：US13333908

    申请日：2011-12-21

    Applicant: Peter J. Cousins ,  David D. Smith ,  Seung B. Rim

    Inventor： Peter J. Cousins ,  David D. Smith ,  Seung B. Rim

    IPC: H01L31/18

    CPC classification number: H01L31/1804 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0747 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

    Abstract translation: 公开了一种制造高效太阳能电池的方法。 该方法包括在硅衬底的背面上提供薄的电介质层和掺杂的多晶硅层。 随后，可以在硅衬底的背面和前侧上形成高质量的氧化物层和宽带隙掺杂的半导体层。 然后可以执行通过接触开口将金属指板平坦化到掺杂多晶硅层上的金属化工艺。 镀金属指可以形成第一金属网格线。 可以通过将金属直接电镀到硅衬底的背侧上的发射极区域来形成第二金属网格线，从而消除了对第二金属网格线的接触开口的需要。 其中优点在于，制造方法提供了降低的热处理，降低的蚀刻步骤，提高的效率以及用于制造高效率太阳能电池的简化程序。

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