A top-emission type light emitting display device and a corresponding manufacturing method are described. A device substrate has display area and non-display areas. In the display area are formed: a thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode; and an organic light emitting element including an anode, an organic light emitting layer, and a cathode. In the non-display area a second voltage supply wire is formed on, and overlaps with, a first voltage supply wire. An anti-burning layer is disposed between the first voltage and the second voltage supply wires. The anti-burning layer is an insulation layer with the same thickness as a space sufficient to suppress burning of the wires in the overlapping region between the first voltage supply wire and the second voltage supply wire, thus improving reliability and manufacturing yield of the device.