The invention relates to a method for producing a micro-electromechanical device in a material substrate suitable for producing integrated electronic components, in particular a semiconductor substrate, wherein a material substrate (12,14,16) is provided on which at least one surface structure (26) is to be formed during production of the device. An electronic component (30) is formed in the material substrate (12,14,16) using process steps of a conventional method for producing integrated electronic components. A component element (44) defining the position of the electronic component (30) and/or required for the function of the electronic component (30) is selectively formed on the material substrate (12,14,16) from an etching stop material acting as an etching stop in case of etching of the material substrate (12,14,16) and/or in case of etching of a material layer (52) disposed on the material substrate (12,14,16). When the component element (44) of the electronic component (30) is implemented, a bounding region (48) is also formed on the material substrate (12,14,16) along at least a partial section of an edge of the surface structure (26), wherein said bounding region bounds said partial section. The material substrate (12,14, 16) thus implemented is selectively etched for forming the surface structure (26), in that the edge of the bounding region (48) defines the position of the surface structure (26) to be implemented on the material substrate (12, 14,16).