发明申请
- 专利标题: NONVOLATILE RANDOM ACCESS MEMORY
- 专利标题(中): 非易失性随机存取存储器
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申请号: US14692239申请日: 2015-04-21
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公开(公告)号: US20150228320A1公开(公告)日: 2015-08-13
- 发明人: Yutaka SHIRAI , Naoki SHIMIZU , Kenji TSUCHIDA , Yoji WATANABE , Ji Hyae BAE , Yong Ho KIM
- 申请人: Yutaka SHIRAI , Naoki SHIMIZU , Kenji TSUCHIDA , Yoji WATANABE , Ji Hyae BAE , Yong Ho KIM
- 主分类号: G11C8/18
- IPC分类号: G11C8/18 ; G11C8/10
摘要:
According to one embodiment, a memory includes a memory cell array with banks, each bank including rows, a first word lines provided in corresponding to the rows, an address latch circuit which latches a first row address signal, a row decoder which activates one of the first word lines, and a control circuit which is configured to execute a first operation which activates one of the banks based on a bank address signal when a first command is loaded, and a second operation which latches the first row address signal in the address latch circuit, and execute a third operation which activates one of the first word lines by the row decoder based on a second row address signal and the first row address signal latched in the address latch circuit when a second command is loaded after the first command.