Invention Application
- Patent Title: Semiconductor Device
- Patent Title (中): 半导体器件
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Application No.: US14703731Application Date: 2015-05-04
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Publication No.: US20150236095A1Publication Date: 2015-08-20
- Inventor: Markus Mueller , Anco Heringa
- Applicant: NXP B.V. , TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: NL Eindhoven TW Hsinchu
- Assignee: NXP B.V.,TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: NXP B.V.,TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: NL Eindhoven TW Hsinchu
- Priority: EP11194254.6 20111219
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/205 ; H01L29/12 ; H01L29/20 ; H01L29/778 ; H01L29/872
Abstract:
A semiconductor device and a method of making the same. The device includes a semiconductor substrate having an AlGaN layer on a GaN layer. The device also includes first contact and a second contact. The average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact.
Public/Granted literature
- US09425258B2 Semiconductor device Public/Granted day:2016-08-23
Information query
IPC分类:
