发明申请
US20150249024A1 METHOD AND EQUIPMENT FOR REMOVING PHOTORESIST RESIDUE AFER DRY ETCH
审中-公开
用于去除干燥后的光电子残留的方法和设备
- 专利标题： METHOD AND EQUIPMENT FOR REMOVING PHOTORESIST RESIDUE AFER DRY ETCH
- 专利标题（中）： 用于去除干燥后的光电子残留的方法和设备
-
申请号： US14698940申请日： 2015-04-29
-
公开(公告)号： US20150249024A1公开(公告)日： 2015-09-03
- 发明人: Mu-Chen CHEN , Yi-Tse HUANG , Wei-Fan LIAO , Han-Ti HSIAW , Chia-I SHEN
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01J37/32 ; H01L21/02
摘要：
A method for removing photoresist residue includes etching a photoresist layer disposed over a front side of a semiconductor substrate during fabrication of a semiconductor device, and exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen. The method further includes cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid.