Invention Application
- Patent Title: SEMICONDUCTOR INTEGRATED CIRCUIT
- Patent Title (中): 半导体集成电路
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Application No.: US14707510Application Date: 2015-05-08
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Publication No.: US20150249079A1Publication Date: 2015-09-03
- Inventor: Kenji ARAI
- Applicant: ROHM CO., LTD.
- Priority: JP2013-123011 20130611
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L23/522 ; H01L23/50 ; H03K5/1252

Abstract:
An input signal having a high level or a low level is input to a pad. A first protection element includes a first transistor configured as an N-channel MOSFET designed so as to withstand ESD. A second protection element includes a second transistor configured as a P-channel MOSFET designed so as to withstand ESD. A capacitance element is connected to a second line, and forms an RC filter together with a filter resistor. The capacitance element includes at least one from among a third transistor having the same device structure as that of the first transistor and a fourth transistor having the same device structure as that of the second transistor.
Public/Granted literature
- US09508706B2 Semiconductor integrated circuit Public/Granted day:2016-11-29
Information query
IPC分类: