公开(公告)号：US20150249079A1

公开(公告)日：2015-09-03

申请号：US14707510

申请日：2015-05-08

Applicant: ROHM CO., LTD.

Inventor： Kenji ARAI

IPC: H01L27/02 ,  H01L23/522 ,  H01L23/50 ,  H03K5/1252

CPC classification number: H01L27/0288 ,  H01L23/50 ,  H01L23/5227 ,  H01L27/0266 ,  H01L27/0285 ,  H01L2924/0002 ,  H03K5/1252 ,  H01L2924/00

Abstract: An input signal having a high level or a low level is input to a pad. A first protection element includes a first transistor configured as an N-channel MOSFET designed so as to withstand ESD. A second protection element includes a second transistor configured as a P-channel MOSFET designed so as to withstand ESD. A capacitance element is connected to a second line, and forms an RC filter together with a filter resistor. The capacitance element includes at least one from among a third transistor having the same device structure as that of the first transistor and a fourth transistor having the same device structure as that of the second transistor.

Abstract translation: 具有高电平或低电平的输入信号被输入到焊盘。 第一保护元件包括被配置为设计成能够承受ESD的N沟道MOSFET的第一晶体管。 第二保护元件包括被配置为设计成能够承受ESD的P沟道MOSFET的第二晶体管。 电容元件连接到第二线，并与滤波电阻一起形成RC滤波器。 电容元件包括具有与第一晶体管相同的器件结构的第三晶体管中的至少一个晶体管和与第二晶体管具有相同器件结构的第四晶体管。

公开(公告)号：US20140312863A1

公开(公告)日：2014-10-23

申请号：US14230531

申请日：2014-03-31

Applicant: ROHM CO., LTD.

Inventor： Kenji ARAI ,  Noriaki HIRAGA

IPC: H02M3/158 ,  H02M3/156

CPC classification number: B60L11/18 ,  H02M3/156 ,  H02M3/158 ,  H02M2001/0045

Abstract: A switching transistor is configured such that its on resistance RON is switchable between at least two values RON1 and RON2. When the switching transistor is switched from off to on, a control circuit sets the on resistance of the switching transistor to the first value RON1 for a first period immediately after the switching of the switching transistor. Subsequently, for a second period until the switching transistor is turned off, the control circuit sets the on resistance of the switching transistor to the second value RON2 that is smaller than the first value RON1.

Abstract translation: 开关晶体管被配置为使得其导通电阻RON可在至少两个值RON1和RON2之间切换。 当开关晶体管从截止切换到导通时，控制电路在开关晶体管切换之后的第一周期将开关晶体管的导通电阻设置为第一值RON1。 随后，在开关晶体管断开之前的第二时段，控制电路将开关晶体管的导通电阻设置为小于第一值RON1的第二值RON2。

公开(公告)号：US20160185235A1

公开(公告)日：2016-06-30

申请号：US15059459

申请日：2016-03-03

Applicant: ROHM CO., LTD.

Inventor： Kenji ARAI ,  Noriaki HIRAGA

IPC: B60L11/18 ,  H02M3/158

CPC classification number: B60L11/18 ,  H02M3/156 ,  H02M3/158 ,  H02M2001/0045

Abstract: A switching transistor is configured such that its on resistance RON is switchable between at least two values RON1 and RON2. When the switching transistor is switched from off to on, a control circuit sets the on resistance of the switching transistor to the first value RON1 for a first period immediately after the switching of the switching transistor. Subsequently, for a second period until the switching transistor is turned off, the control circuit sets the on resistance of the switching transistor to the second value RON2 that is smaller than the first value RON1.

Abstract translation: 开关晶体管被配置为使得其导通电阻RON可在至少两个值RON1和RON2之间切换。 当开关晶体管从截止切换到导通时，控制电路在开关晶体管切换之后的第一周期将开关晶体管的导通电阻设置为第一值RON1。 随后，在开关晶体管断开之前的第二时段，控制电路将开关晶体管的导通电阻设置为小于第一值RON1的第二值RON2。

公开(公告)号：US20140361372A1

公开(公告)日：2014-12-11

申请号：US14293349

申请日：2014-06-02

Applicant: ROHM CO., LTD.

Inventor： Kenji ARAI

IPC: H01L27/02

CPC classification number: H01L27/0288 ,  H01L23/50 ,  H01L23/5227 ,  H01L27/0266 ,  H01L27/0285 ,  H01L2924/0002 ,  H03K5/1252 ,  H01L2924/00

Abstract: An input signal having a high level or a low level is input to a pad. A first protection element includes a first transistor configured as an N-channel MOSFET designed so as to withstand ESD. A second protection element includes a second transistor configured as a P-channel MOSFET designed so as to withstand ESD. A capacitance element is connected to a second line, and forms an RC filter together with a filter resistor. The capacitance element includes at least one from among a third transistor having the same device structure as that of the first transistor and a fourth transistor having the same device structure as that of the second transistor.

Abstract translation: 具有高电平或低电平的输入信号被输入到焊盘。 第一保护元件包括被配置为设计成耐受ESD的N沟道MOSFET的第一晶体管。 第二保护元件包括被配置为设计成能够承受ESD的P沟道MOSFET的第二晶体管。 电容元件连接到第二线，并与滤波电阻一起形成RC滤波器。 电容元件包括具有与第一晶体管相同的器件结构的第三晶体管中的至少一个晶体管和与第二晶体管具有相同器件结构的第四晶体管。