Invention Application
- Patent Title: WAFER LEVEL LIGHT-EMITTING DIODE ARRAY
- Patent Title (中): 水平发光二极管阵列
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Application No.: US14722011Application Date: 2015-05-26
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Publication No.: US20150255504A1Publication Date: 2015-09-10
- Inventor: Jong Min Jang , Jong Hyeon Chae , Joon Sup Lee , Daewoong Suh , Hyun A. Kim , Won Young Roh , Min Woo Kang
- Applicant: Seoul Viosys Co., Ltd.
- Priority: KR1020120099263 20120907; KR1020120101716 20120913; KR1020130088712 20130726; KR1020130088714 20130726; KR1020140063157 20140526
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/62

Abstract:
A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.
Public/Granted literature
- US09318529B2 Wafer level light-emitting diode array Public/Granted day:2016-04-19
Information query
IPC分类: