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公开(公告)号：US10756237B2
公开(公告)日：2020-08-25
申请号：US16571604
申请日：2019-09-16
发明人： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Daewoong Suh , Dae Sung Cho , Joon Sup Lee , Kyu Ho Lee , Chi Hyun In
IPC分类号： H01L33/48 , H01L33/40 , H01L33/22 , H01L33/38 , H01L33/20 , H01L33/00 , H01L33/14 , H01L33/32 , H01L33/44 , H01L33/12 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/08
摘要： A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.
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公开(公告)号：US10749080B2
公开(公告)日：2020-08-18
申请号：US16660460
申请日：2019-10-22
发明人： Jong Hyeon Chae , Joon Sup Lee , Won Young Roh , Min Woo Kang , Jong Min Jang , Hyun A Kim , Daewoong Suh
IPC分类号： H01L33/44 , H01L23/00 , H01L33/24 , H01L33/14 , H01L33/10 , H01L33/62 , H01L33/54 , H01L33/40 , H01L27/15 , H01L33/20 , H01L33/38 , H01L25/075 , H01L33/08
摘要： A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.
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公开(公告)号：US10319884B2
公开(公告)日：2019-06-11
申请号：US15132887
申请日：2016-04-19
发明人： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Daewoong Suh , Dae Sung Cho , Joon Sup Lee , Kyu Ho Lee , Chi Hyun In
IPC分类号： H01L33/00 , H01L33/40 , H01L33/22 , H01L33/20 , H01L33/38 , H01L33/14 , H01L33/32 , H01L33/44 , H01L33/12 , H01L33/42 , H01L33/46 , H01L33/48 , H01L33/62 , H01L33/08
摘要： A light emitting diode includes a first conductive type semiconductor layer and a mesa disposed on the first conductive type semiconductor layer. The mesa includes an active layer and a second conductive type semiconductor layer. A reflective electrode is disposed on the mesa to be in ohmic-contact with the second conductive type semiconductor layer. A current spreading layer is disposed on the mesa and the reflective electrode. A first portion of the current spreading layer is in ohmic-contact with an upper surface of an end portion of the first conductive type semiconductor layer. A lower insulating layer is disposed between the mesa and the current spreading layer, and the reflective electrode and the current spreading layer. An upper insulating layer covers the current spreading layer and includes a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa.
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公开(公告)号：US10249798B2
公开(公告)日：2019-04-02
申请号：US15244744
申请日：2016-08-23
发明人： Chang Yeon Kim , Sung Su Son , Joon Sup Lee , Jong Hyeon Chae
摘要： A light emitting device includes a light emitting structure including a support structure including a first bulk electrode a second bulk electrode disposed on and electrically connected to the first electrode and the second electrode, respectively. A substrate is disposed adjacent to the support structure, wherein each of the first and second bulk electrodes includes an upper region and a lower region with the upper regions of the first and second bulk electrodes being separated from each other by a first distance. The substrate includes a first interconnection portion and a second interconnection portion electrically connected to the first bulk electrode and the second bulk electrode, respectively, and separated from each other by a second distance. The second distance is greater than the first distance.
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公开(公告)号：US20180076360A1
公开(公告)日：2018-03-15
申请号：US15558143
申请日：2016-03-08
发明人： Jong Hyeon Chae , Chang Yeon Kim , Joon Sup Lee , Dae Woong Suh , Won Young Roh , Ju Yong Park , Seung Hyun Kim
CPC分类号： H01L33/382 , H01L27/15 , H01L33/20 , H01L33/387 , H01L33/405 , H01L33/62
摘要： A light emitting element according to an embodiment of the present invention comprises a first conductive-type semiconductor layer including a contact region on the lower surface thereof, a light emitting structure which includes a mesa including a second conductive-type semiconductor layer and an active layer, a second electrode, a first insulation layer, an electrode cover layer, a first electrode, a second insulation layer, and a support structure. In addition, the mesa may include a body part and a plurality of protrusion parts protruding from the body part, the contact region may be disposed between the protrusion parts, and a part of the contact region may overlap with a second metal bulk in the vertical direction. Accordingly, current spreading efficiency can be improved, and thus luminance efficiency can be more improved.
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公开(公告)号：US09859466B2
公开(公告)日：2018-01-02
申请号：US15470820
申请日：2017-03-27
发明人： Jong Hyeon Chae , Joon Sup Lee , Daewoong Suh , Won Young Roh , Min Woo Kang , Jong Min Jang
IPC分类号： H01L27/15 , H01L29/22 , H01L21/00 , H01L33/24 , H01L33/60 , H01L33/40 , H01L33/50 , H01L33/46
CPC分类号： H01L33/24 , H01L27/156 , H01L33/0075 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2933/0016 , H01L2933/0025
摘要： Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.
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公开(公告)号：US20170365638A9
公开(公告)日：2017-12-21
申请号：US15409306
申请日：2017-01-18
发明人： Jong Kyu Kim , So Ra Lee , Yeo Jin Yoon , Jae Kwon Kim , Joon Sup Lee , Min Woo Kang , Se Hee Oh , Hyun A Kim , Hyoung Jin Lim
CPC分类号： H01L27/156 , H01L33/08 , H01L33/36 , H01L33/38 , H01L33/58 , H01L33/60 , H01L33/62 , H01L33/64 , H01L2224/16225 , H01L2224/32245 , H01L2924/181 , H01L2924/19107 , H01L2933/0016 , H01L2924/00012
摘要： A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
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公开(公告)号：US09847457B2
公开(公告)日：2017-12-19
申请号：US14985162
申请日：2015-12-30
发明人： Jong Hyeon Chae , Joon Sup Lee , Daewoong Suh , Won Young Roh , Min Woo Kang , Jong Min Jang , Se Hee Oh , Hyun A Kim
CPC分类号： H01L33/38 , H01L33/40 , H01L33/405 , H01L33/44 , H01L2224/16225
摘要： A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
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公开(公告)号：US20170200858A1
公开(公告)日：2017-07-13
申请号：US15470820
申请日：2017-03-27
发明人： Jong Hyeon Chae , Joon Sup Lee , Daewoong Suh , Won Young Roh , Min Woo Kang , Jong Min Jang
CPC分类号： H01L33/24 , H01L27/156 , H01L33/0075 , H01L33/14 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2933/0016 , H01L2933/0025
摘要： Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.
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公开(公告)号：US09634193B2
公开(公告)日：2017-04-25
申请号：US14671491
申请日：2015-03-27
发明人： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Daewoong Suh , Dae Sung Cho , Joon Sup Lee , Kyu Ho Lee , Chi Hyun In
IPC分类号： H01L33/12 , H01L33/40 , H01L33/22 , H01L33/20 , H01L33/38 , H01L33/00 , H01L33/14 , H01L33/32 , H01L33/44 , H01L33/42 , H01L33/46 , H01L33/48 , H01L33/62 , H01L33/08
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/08 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： A light-emitting diode including a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first semiconductor layer, and a reflective pattern disposed on the second semiconductor layer and configured to reflect light emitted from the active layer, the reflective pattern having heterogeneous metal layers and configured to absorb stress caused by differences in coefficient of thermal expansion between the heterogeneous metal layers.
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