发明申请
US20150255637A1 PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER
审中-公开
包含含PNICTIDE的吸收层和发射层之间的电化学膜的薄膜电容器的光伏器件
- 专利标题： PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER
- 专利标题（中）： 包含含PNICTIDE的吸收层和发射层之间的电化学膜的薄膜电容器的光伏器件
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申请号： US14433221申请日： 2013-10-07
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公开(公告)号： US20150255637A1公开(公告)日： 2015-09-10
- 发明人: Jeffrey P. Bosco , Rebekah K. Feist , Harry A. Atwater , Marty W. Degroot , James C. Stevens , Gregory M. Kimball
- 申请人： DOW GLOBAL TECHNOLOGIES LLC , CALIFORNIA INSTITUTE OF TECHNOLOGY
- 国际申请： PCT/US2013/063705 WO 20131007
- 主分类号： H01L31/0296
- IPC分类号： H01L31/0296 ; H01L31/032 ; H01L31/18 ; H01L31/072
摘要：
The present invention provides strategies for improving the quality of the insulating layer in MIS and SIS devices in which the insulator layer interfaces with at least one pnictide-containing film The principles of the present invention are based at least in part on the discovery that very thin (20 nm or less) insulating films comprising a chalcogenide such as i-ZnS are surprisingly superior tunnel barriers in MIS and SIS devices incorporating pnictide semiconductors. In one aspect, the present invention relates to a photovoltaic device, comprising: a semiconductor region comprising at least one pnictide semiconductor; an insulating region electrically coupled to the semiconductor region, wherein the insulating region comprises at least one chalcogenide and has a thickness in the range from 0.5 nm to 20 nm; and a rectifying region electrically coupled to the semiconductor region in a manner such that the insulating region is electrically interposed between the collector region and the semiconductor region.
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