A technique includes providing a nanodevice. A gate electrode structure has nanochannels with a first end connected to a first common trench and a second end connected to a second common trench. A gate electrode extends laterally as a continuous line on the gate electrode structure and is formed in each of the nanochannels. The gate electrode forms a separate nano-ring electrode around a partial circumference inside each of the nanochannels. The gate electrode is parallel to the first and second common trenches and is perpendicular to the nanochannels.