Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US14230223Application Date: 2014-03-31
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Publication No.: US20150279957A1Publication Date: 2015-10-01
- Inventor: Yu-Ping Wang , Jyh-Shyang Jenq , Yu-Hsiang Lin , Hsuan-Hsu Chen , Chien-Hao Chen , Yi-Han Ye
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78

Abstract:
A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a first gate structure, a second gate structure and a second dielectric spacer. Each of the first gate structure and the second gate structure adjacent to each other includes a first dielectric spacer. The second dielectric spacer is on one of opposing sidewalls of the first gate structure and without being disposed on the dielectric spacer of the second gate structure.
Public/Granted literature
- US09711646B2 Semiconductor structure and manufacturing method for the same Public/Granted day:2017-07-18
Information query
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