Invention Application
US20150279957A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME 有权
半导体结构及其制造方法

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
Abstract:
A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a first gate structure, a second gate structure and a second dielectric spacer. Each of the first gate structure and the second gate structure adjacent to each other includes a first dielectric spacer. The second dielectric spacer is on one of opposing sidewalls of the first gate structure and without being disposed on the dielectric spacer of the second gate structure.
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