Invention Application
US20150287651A1 OVERLAY MARK DEPENDENT DUMMY FILL TO MITIGATE GATE HEIGHT VARIATION
有权
叠加标记依赖DUMMY填充以缓解门高度变化
- Patent Title: OVERLAY MARK DEPENDENT DUMMY FILL TO MITIGATE GATE HEIGHT VARIATION
- Patent Title (中): 叠加标记依赖DUMMY填充以缓解门高度变化
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Application No.: US14243491Application Date: 2014-04-02
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Publication No.: US20150287651A1Publication Date: 2015-10-08
- Inventor: Guoxiang NING , Chan Seob CHO , Paul ACKMANN , Jung Yu HSIEH , Hui Peng KOH
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/306 ; H01L27/088 ; H01L23/544
Abstract:
A method of forming dummy structures and an overlay mark protection zone over an active layer zone based on the shape of an overlay mark and the resulting device are provided. Embodiments include determining a size and a shape of an overlay mark; determining a size and a shape of an overlay mark protection zone based on the shape of the overlay mark; determining a shape of a plurality of dummy structures based on the shape of the overlay mark; determining a size and a shape of an active layer zone based on the size and the shape of the overlay mark and the plurality of dummy structures; forming the active layer zone in an active layer of a semiconductor substrate; forming the overlay mark and the plurality of dummy structures over the active layer zone in a poly layer of the semiconductor substrate; and planarizing the poly layer.
Public/Granted literature
- US09252061B2 Overlay mark dependent dummy fill to mitigate gate height variation Public/Granted day:2016-02-02
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