Invention Application
- Patent Title: METHOD OF FORMING A SEMICONDUCTOR SUBSTRATE INCLUDING A COOLING CHANNEL
- Patent Title (中): 形成包含冷却通道的半导体衬底的方法
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Application No.: US14692174Application Date: 2015-04-21
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Publication No.: US20150287662A1Publication Date: 2015-10-08
- Inventor: Scott R. Bouras
- Applicant: Hamilton Sundstrand Corporation
- Main IPC: H01L23/473
- IPC: H01L23/473 ; H01L23/367 ; H01L21/48 ; H01L21/302 ; H01L23/00 ; H01L25/00 ; H01L25/065

Abstract:
A semiconductor substrate for use in an integrated circuit, the semiconductor substrate including a channel defined on a surface of the substrate. The channel includes a first wall, a second wall, and a third wall. The first wall is recessed from the surface. The second wall extends from the surface to the first wall. The third wall extends from the surface to the first wall and faces the second wall across the channel. At least one of the second wall and the third wall includes a plurality of structures projecting into the channel from the second wall or the third wall.
Public/Granted literature
- US09312202B2 Method of forming a semiconductor substrate including a cooling channel Public/Granted day:2016-04-12
Information query
IPC分类: