A NAND-type flash memory device and method for programming the NAND-type flash memory device are provided. The method may include applying a voltage of 0 V to an unselected string select line, applying the voltage of 0 V to a selected bit line, applying a supply voltage to a selected string select line, and applying a dummy pass voltage to a dummy word line, the dummy pass voltage being in a range between 0 V to a pass voltage. The method may further include applying the supply voltage to an unselected bit line, applying the pass voltage to a selected word line, applying the pass voltage to an unselected word line; and applying a program voltage to the selected word line.