发明申请
- 专利标题： THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES INCLUDING A VERTICAL CHANNEL
- 专利标题（中）： 包括垂直通道的三维半导体存储器件
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申请号： US14644256申请日： 2015-03-11
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公开(公告)号： US20150303213A1公开(公告)日： 2015-10-22
- 发明人: Jaesung SIM , Youngwoo Park
- 申请人： Jaesung SIM , Youngwoo Park
- 优先权： KR10-2014-0047447 20140421
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L29/267 ; H01L29/10 ; H01L29/165 ; H01L29/788 ; H01L29/04 ; H01L29/161
摘要：
Semiconductor memory devices and methods of forming the semiconductor devices may be provided. The semiconductor memory devices may include a channel portion of an active pillar that may be formed of a semiconductor material having a charge mobility greater than a charge mobility of silicon. The semiconductor devices may also include a non-channel portion of the active pillar including a semiconductor material having a high silicon content.