公开(公告)号：US20170125522A1

公开(公告)日：2017-05-04

申请号：US15403440

申请日：2017-01-11

申请人： Jaesung SIM ,  Youngwoo Park

发明人： Jaesung SIM ,  Youngwoo Park

IPC分类号： H01L29/10 ,  H01L27/11582 ,  H01L29/04 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/788 ,  H01L27/11556 ,  H01L29/267

CPC分类号： H04L49/70 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/267 ,  H01L29/7883 ,  H04L45/16 ,  H04L49/201 ,  H04L49/3009

摘要： Semiconductor memory devices and methods of forming the semiconductor devices may be provided. The semiconductor memory devices may include a channel portion of an active pillar that may be formed of a semiconductor material having a charge mobility greater than a charge mobility of silicon. The semiconductor devices may also include a non-channel portion of the active pillar including a semiconductor material having a high silicon content.

公开(公告)号：US20150303213A1

公开(公告)日：2015-10-22

申请号：US14644256

申请日：2015-03-11

申请人： Jaesung SIM ,  Youngwoo Park

发明人： Jaesung SIM ,  Youngwoo Park

IPC分类号： H01L27/115 ,  H01L29/267 ,  H01L29/10 ,  H01L29/165 ,  H01L29/788 ,  H01L29/04 ,  H01L29/161

CPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L29/1041 ,  H01L29/165 ,  H01L29/267 ,  H01L29/7827

摘要： Semiconductor memory devices and methods of forming the semiconductor devices may be provided. The semiconductor memory devices may include a channel portion of an active pillar that may be formed of a semiconductor material having a charge mobility greater than a charge mobility of silicon. The semiconductor devices may also include a non-channel portion of the active pillar including a semiconductor material having a high silicon content.

摘要翻译： 可以提供半导体存储器件和形成半导体器件的方法。 半导体存储器件可以包括可以由电荷迁移率大于硅的电荷迁移率的半导体材料形成的有源支柱的沟道部分。 半导体器件还可以包括有源柱的非沟道部分，其包括具有高硅含量的半导体材料。

公开(公告)号：US20160027514A1

公开(公告)日：2016-01-28

申请号：US14702895

申请日：2015-05-04

申请人： Jaesung SIM ,  Youngwoo PARK

发明人： Jaesung SIM ,  Youngwoo PARK

IPC分类号： G11C16/10 ,  G11C16/08 ,  G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/24

摘要： According to example embodiments, a nonvolatile memory device includes a plurality of cell strings on a horizontal semiconductor layer. Each of the cell strings including a plurality of memory cells stacked in a direction perpendicular to the horizontal semiconductor layer. According to example embodiments, a programming method of the nonvolatile memory device includes setting up bitlines corresponding the cell strings, setting up a plurality of string select lines connected to the cell strings, and applying a negative voltage lower to a ground select line. The ground select line is connected to a plurality of ground select transistors between the memory cells and the semiconductor layer. The string select lines extend in a direction intersecting the bitlines. The negative voltage is lower than a ground voltage.

摘要翻译： 根据示例性实施例，非易失性存储器件包括在水平半导体层上的多个单元串。 每个单元串包括在与水平半导体层垂直的方向上堆叠的多个存储单元。 根据示例实施例，非易失性存储器件的编程方法包括设置与单元串对应的位线，设置连接到单元串的多个串选择线，以及向接地选择线施加较低的负电压。 接地选择线连接到存储器单元和半导体层之间的多个接地选择晶体管。 字符串选择行在与位线相交的方向上延伸。 负电压低于接地电压。

公开(公告)号：US20200268084A1

公开(公告)日：2020-08-27

申请号：US16287360

申请日：2019-02-27

申请人： Jaesung SIM

发明人： Jaesung SIM

IPC分类号： A41G5/00

摘要： A head covering with a band portion in a shape of a flat strip or loop and a plurality of flat members that are connected to or a part of the band is disclosed. The flat members projects toward a top side of the band. An outer surface of the flat members includes or is made of a material that can be fastened to a certain corresponding type of material. Thereby, the invention provides a foundation for hairpieces having a fastening component that corresponds to a fastening component used in the invention. The flat members as a whole generally cover a scalp of a head but not completely, exposing the scalp through gaps between flat members. Especially, a top portion or a crown of a scalp is generally exposed due to an open-top construction of the head covering. However, as a single hairpiece is fastened to multiple flat members, the hairpiece in turn works to hold the multiple flat members together. When more hairpieces are attached to flat members, the flat members become structurally solid in a shape that conforms to the contour of the scalp. In so doing, hairpieces cover and bridge the gaps between flat members, thereby completely covering a head.

公开(公告)号：US20080291737A1

公开(公告)日：2008-11-27

申请号：US12119060

申请日：2008-05-12

申请人： Seunghyun MOON ,  Kihwan CHOI ,  Jaesung SIM ,  Jungdal CHOI

发明人： Seunghyun MOON ,  Kihwan CHOI ,  Jaesung SIM ,  Jungdal CHOI

IPC分类号： G11C16/06

CPC分类号： G11C16/3404

摘要： Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying a programming pulse, an erasing pulse, a time delay, a soft erase pulse, soft programming pulse and/or a verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.

摘要翻译： 编程或擦除具有电荷存储层的非易失性存储器件的方法包括执行至少一个单元编程或擦除循环，每个单元编程或擦除循环包括应用编程脉冲，擦除脉冲，时间延迟，软擦除脉冲， 软编程脉冲和/或验证脉冲作为对非易失性存储器件的一部分（例如，字线或衬底）的正或负电压。