发明申请
US20150311248A1 BACK SIDE ILLUMINATED IMAGE SENSOR WITH DEEP TRENCH ISOLATION STRUCTURES AND SELF-ALIGNED COLOR FILTERS
有权
具有深度分离隔离结构和自对准颜色滤光片的背面照明图像传感器
- 专利标题： BACK SIDE ILLUMINATED IMAGE SENSOR WITH DEEP TRENCH ISOLATION STRUCTURES AND SELF-ALIGNED COLOR FILTERS
- 专利标题（中）： 具有深度分离隔离结构和自对准颜色滤光片的背面照明图像传感器
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申请号： US14261481申请日： 2014-04-25
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公开(公告)号： US20150311248A1公开(公告)日： 2015-10-29
- 发明人: Kuo-Cheng Lee , Yun-Wei Cheng , Yung-Lung Hsu , Hsin-Chi Chen
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 主分类号： H01L27/146
- IPC分类号： H01L27/146
摘要：
A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
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