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公开(公告)号：US12081866B2
公开(公告)日：2024-09-03
申请号：US18327825
申请日：2023-06-01
发明人： Yun-Wei Cheng , Chun-Hao Chou , Hsin-Chi Chen , Kuo-Cheng Lee , Hsun-Ying Huang
IPC分类号： H04N5/232 , H01L27/146 , H04N23/10 , H04N23/67 , H04N25/13 , H04N25/133 , H04N25/702 , H04N25/704 , H04N5/369
CPC分类号： H04N23/67 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14689 , H04N23/10 , H04N25/133 , H04N25/134 , H04N25/702 , H04N25/704
摘要： An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.
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公开(公告)号：US12051704B2
公开(公告)日：2024-07-30
申请号：US17446401
申请日：2021-08-30
发明人： Feng-Chien Hsieh , Yun-Wei Cheng , Kuo-Cheng Lee , Cheng-Ming Wu
IPC分类号： H01L27/14 , H01L27/146
CPC分类号： H01L27/14605 , H01L27/14607 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H01L27/14649 , H01L27/14685
摘要： In some implementations, a pixel array may include a near infrared (NIR) cut filter layer for visible light pixel sensors of the pixel array. The NIR cut filter layer is included in the pixel array to absorb or reflect NIR light for the visible light pixel sensors to reduce the amount of MR light absorbed by the visible light pixel sensors. This increases the accuracy of the color information provided by the visible light pixel sensors, which can be used to produce more accurate images. In some implementations, the visible light pixel sensors and/or MR pixel sensors may include high absorption regions to adjust the orientation of the angle of refraction for the visible light pixel sensors and/or the MR pixel sensors, which may increase the quantum efficiency of the visible light pixel sensors and/or the MR pixel sensors.
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公开(公告)号：US20240063234A1
公开(公告)日：2024-02-22
申请号：US18500357
申请日：2023-11-02
发明人： Chia-Yu Wei , Hsin-Chi Chen , Kuo-Cheng Lee , Ping-Hao Lin , Hsun-Ying Huang , Yen-Liang Lin , Yu Ting Kao
IPC分类号： H01L27/146
CPC分类号： H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14621 , H01L27/1463 , H01L27/14636 , H01L27/14641 , H01L27/14689 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14647 , H01L27/14687 , H01L27/14638 , H01L29/7827
摘要： The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.
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公开(公告)号：US11810936B2
公开(公告)日：2023-11-07
申请号：US16949927
申请日：2020-11-20
发明人： ChunHao Lin , Feng-Chien Hsieh , Yun-Wei Cheng , Kuo-Cheng Lee
IPC分类号： H01L27/146
CPC分类号： H01L27/14629 , H01L27/14685 , H01L27/1463 , H01L27/1464 , H01L27/14623
摘要： A pixel array may include air gap reflection structures under a photodiode of a pixel sensor to reflect photons that would otherwise partially refract or scatter through a bottom surface of a photodiode. The air gap reflection structures may reflect photons upward toward the photodiode so that the photons may be absorbed by the photodiode. This may increase the quantity of photons absorbed by the photodiode, which may increase the quantum efficiency of the pixel sensor and the pixel array.
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公开(公告)号：US11706525B2
公开(公告)日：2023-07-18
申请号：US17493752
申请日：2021-10-04
发明人： Yun-Wei Cheng , Chun-Hao Chou , Hsin-Chi Chen , Kuo-Cheng Lee , Hsun-Ying Huang
IPC分类号： H04N5/232 , H04N23/67 , H01L27/146 , H04N23/10 , H04N25/133 , H04N25/13 , H04N25/702 , H04N25/704 , H04N5/369
CPC分类号： H04N23/67 , H01L27/1463 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14689 , H04N23/10 , H04N25/133 , H04N25/134 , H04N25/702 , H04N25/704
摘要： An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.
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公开(公告)号：US11495632B2
公开(公告)日：2022-11-08
申请号：US17007684
申请日：2020-08-31
发明人： Kuo-Cheng Lee , Yun-Wei Cheng , Yung-Lung Hsu , Hsin-Chi Chen
IPC分类号： H01L27/146
摘要： A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
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公开(公告)号：US20210384233A1
公开(公告)日：2021-12-09
申请号：US17401382
申请日：2021-08-13
发明人： Yun-Wei Cheng , Horng-Huei Tseng , Chao-Hsiung Wang , Chun-Hao Chou , Tsung-Han Tsai , Kuo-Cheng Lee , Tzu-Hsuan Hsu , Yung-Lung Hsu
IPC分类号： H01L27/146
摘要： A back side illumination (BSI) image sensor with a dielectric grid opening having a planar lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the planar lower surface of the dielectric grid opening.
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公开(公告)号：US09799697B2
公开(公告)日：2017-10-24
申请号：US14261481
申请日：2014-04-25
发明人： Kuo-Cheng Lee , Yun-Wei Cheng , Yung-Lung Hsu , Hsin-Chi Chen
IPC分类号： H01L27/146
CPC分类号： H01L27/14645 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14629 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14698
摘要： A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
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9.发明授权公开(公告)号：US09722099B2
公开(公告)日：2017-08-01
申请号：US13949993
申请日：2013-07-24
IPC分类号： H01L31/0216 , H01L27/146
CPC分类号： H01L31/02164 , H01L27/1462 , H01L27/14623 , H01L27/1464 , H01L27/14685 , H01L31/02161
摘要： A light sensing device includes a substrate, a light sensing area on the substrate, and a light shielding layer over the substrate. The light shielding layer does not cover the light sensing area. At least one outgassing hole is formed through the light shielding layer.
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公开(公告)号：US09559135B2
公开(公告)日：2017-01-31
申请号：US14464035
申请日：2014-08-20
发明人： Cheng-Yuan Li , Kun-Huei Lin , Chun-Hao Chou , Kuo-Cheng Lee , Yung-Lung Hsu
IPC分类号： H01L23/48 , H01L27/146 , H01L31/18 , H01L31/02
CPC分类号： H01L27/14636 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/1464 , H01L27/1469 , H01L31/02002
摘要： A semiconductor device includes a first semiconductor chip comprising a first metallic structure and a second semiconductor chip comprising a second metallic structure. The second semiconductor chip is bonded with the first semiconductor chip by a first conductive plug. A second conductive plug extends from the first metallic structure and into a substrate of the first semiconductor chip. The first conductive plug connects the first metallic structure and the second metallic structure, wherein a conductive liner is along a sidewall of the first conductive plug or the second conductive plug.
摘要翻译： 半导体器件包括包括第一金属结构的第一半导体芯片和包括第二金属结构的第二半导体芯片。 第二半导体芯片通过第一导电插塞与第一半导体芯片接合。 第二导电插塞从第一金属结构延伸到第一半导体芯片的衬底中。 第一导电插头连接第一金属结构和第二金属结构，其中导电衬垫沿着第一导电插塞或第二导电插塞的侧壁。
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