公开(公告)号：US12302658B2

公开(公告)日：2025-05-13

申请号：US17813947

申请日：2022-07-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Wei-Lin Chen ,  Yu-Cheng Tsai ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC: H10F39/18 ,  H10F39/00 ,  H10F39/12

Abstract: A semiconductor image sensing structure includes a semiconductor substrate having a front side and a back side, a pixel sensor disposed in the semiconductor substrate, a transistor disposed over the front side of the semiconductor substrate, and a reflective structure disposed over the front side of the semiconductor substrate. A gate structure of the transistor and the reflective structure include a same material. A top surface of the gate structure of the transistor and a top surface of the reflective structure are aligned with each other.

公开(公告)号：US20250098346A1

公开(公告)日：2025-03-20

申请号：US18418035

申请日：2024-01-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wen-Chung Chen ,  Chia-Yu Wei ,  Kuo-Cheng Lee ,  Cheng-Hao Chiu ,  Hsiu Chi Yu ,  Hsun-Ying Huang ,  Ming-Hong Su

IPC: H01L27/146

Abstract: An image sensor structure and methods of forming the same are provided. An image sensor structure according to the present disclosure includes a semiconductor substrate including a photodiode, a transfer gate transistor disposed over the semiconductor substrate and having a first channel area, a first dielectric layer disposed over the semiconductor substrate, a semiconductor layer disposed over the first dielectric layer, a source follower transistor disposed over the semiconductor layer and having a second channel area, a row select transistor disposed over the semiconductor layer and having a third channel area, and a reset transistor disposed over the semiconductor layer and having a fourth channel area. The second channel area is greater than the first channel area, the third channel area or the fourth channel area.

公开(公告)号：US12211805B2

公开(公告)日：2025-01-28

申请号：US17447997

申请日：2021-09-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Liang Lu ,  Chun-Wei Chia ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC: H01L23/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/58

Abstract: A semiconductor device includes a first wafer comprising a first portion of a seal ring structure within a body of the first wafer. The semiconductor device includes a second wafer comprising a second portion of the seal ring structure within a body of the second wafer. The second wafer is affixed to the first wafer such that the second portion of the seal ring structure is on the first portion of the seal ring structure. The semiconductor device includes a trench structure comprising a first trench in the first wafer and a second trench in the second wafer, where the first trench and the second trench are on a same side of the seal ring structure.

公开(公告)号：US20240387595A1

公开(公告)日：2024-11-21

申请号：US18789982

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Feng-Chien HSIEH ,  Kuo-Cheng Lee ,  Ying-Hao Chen ,  Yun-Wei Cheng

IPC: H01L27/146

Abstract: An image sensor with stress adjusting layers and a method of fabrication the image sensor are disclosed. The image sensor includes a substrate with a front side surface and a back side surface opposite to the front side surface, an anti-reflective coating (ARC) layer disposed on the back side surface of the substrate, a dielectric layer disposed on the ARC layer, a metal layer disposed on the dielectric layer, and a stress adjusting layer disposed on the metal layer. The stress adjusting layer includes a silicon-rich oxide layer. The concentration profiles of silicon and oxygen atoms in the stress adjusting layer are non-overlapping and different from each other. The image sensor further includes oxide grid structure disposed on the stress adjusting layer.

公开(公告)号：US12081866B2

公开(公告)日：2024-09-03

申请号：US18327825

申请日：2023-06-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC: H04N5/232 ,  H01L27/146 ,  H04N23/10 ,  H04N23/67 ,  H04N25/13 ,  H04N25/133 ,  H04N25/702 ,  H04N25/704 ,  H04N5/369

CPC classification number: H04N23/67 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14689 ,  H04N23/10 ,  H04N25/133 ,  H04N25/134 ,  H04N25/702 ,  H04N25/704

Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

公开(公告)号：US12051704B2

公开(公告)日：2024-07-30

申请号：US17446401

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Feng-Chien Hsieh ,  Yun-Wei Cheng ,  Kuo-Cheng Lee ,  Cheng-Ming Wu

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14607 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685

Abstract: In some implementations, a pixel array may include a near infrared (NIR) cut filter layer for visible light pixel sensors of the pixel array. The NIR cut filter layer is included in the pixel array to absorb or reflect NIR light for the visible light pixel sensors to reduce the amount of MR light absorbed by the visible light pixel sensors. This increases the accuracy of the color information provided by the visible light pixel sensors, which can be used to produce more accurate images. In some implementations, the visible light pixel sensors and/or MR pixel sensors may include high absorption regions to adjust the orientation of the angle of refraction for the visible light pixel sensors and/or the MR pixel sensors, which may increase the quantum efficiency of the visible light pixel sensors and/or the MR pixel sensors.

公开(公告)号：US20240063234A1

公开(公告)日：2024-02-22

申请号：US18500357

申请日：2023-11-02

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Yu Wei ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Ping-Hao Lin ,  Hsun-Ying Huang ,  Yen-Liang Lin ,  Yu Ting Kao

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14689 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14687 ,  H01L27/14638 ,  H01L29/7827

Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

公开(公告)号：US11810936B2

公开(公告)日：2023-11-07

申请号：US16949927

申请日：2020-11-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： ChunHao Lin ,  Feng-Chien Hsieh ,  Yun-Wei Cheng ,  Kuo-Cheng Lee

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14685 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14623

Abstract: A pixel array may include air gap reflection structures under a photodiode of a pixel sensor to reflect photons that would otherwise partially refract or scatter through a bottom surface of a photodiode. The air gap reflection structures may reflect photons upward toward the photodiode so that the photons may be absorbed by the photodiode. This may increase the quantity of photons absorbed by the photodiode, which may increase the quantum efficiency of the pixel sensor and the pixel array.

公开(公告)号：US11706525B2

公开(公告)日：2023-07-18

申请号：US17493752

申请日：2021-10-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC: H04N5/232 ,  H04N23/67 ,  H01L27/146 ,  H04N23/10 ,  H04N25/133 ,  H04N25/13 ,  H04N25/702 ,  H04N25/704 ,  H04N5/369

CPC classification number: H04N23/67 ,  H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14689 ,  H04N23/10 ,  H04N25/133 ,  H04N25/134 ,  H04N25/702 ,  H04N25/704

Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

公开(公告)号：US11495632B2

公开(公告)日：2022-11-08

申请号：US17007684

申请日：2020-08-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kuo-Cheng Lee ,  Yun-Wei Cheng ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC: H01L27/146

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.