Invention Application
US20150311331A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
有权
氮化物半导体器件及制造氮化物半导体器件的方法
- Patent Title: NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
- Patent Title (中): 氮化物半导体器件及制造氮化物半导体器件的方法
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Application No.: US14418589Application Date: 2013-05-24
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Publication No.: US20150311331A1Publication Date: 2015-10-29
- Inventor: Yasuhiro YAMADA , Yoshiharu ANDA , Asamira SUZUKI
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Priority: JP2012-172632 20120803
- International Application: PCT/JP2013/003306 WO 20130524
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/205 ; H01L23/00 ; H01L21/285 ; H01L29/49 ; H01L29/66 ; H01L21/02 ; H01L29/20 ; H01L29/417
Abstract:
A nitride semiconductor device of the present invention has a source-electrode-side insulator protection film layer disposed between a source electrode and a drain electrode on a second nitride semiconductor layer and formed at least partially covering the source electrode, a drain-electrode-side insulator protection film layer disposed separately from the source-electrode-side insulator protection film layer and formed at least partially covering the drain electrode, and a gate layer formed in contact with the second nitride semiconductor layer between the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and made of a p-type metal oxide semiconductor, and the gate layer has regions opposite to the second nitride semiconductor layer across each of the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and a region in contact with the second nitride semiconductor layer.
Public/Granted literature
- US09583608B2 Nitride semiconductor device and method for manufacturing nitride semiconductor device Public/Granted day:2017-02-28
Information query
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