发明申请
- 专利标题: APPARATUS AND METHOD FOR MONITORING OPERATION OF AN INSULATED GATE BIPOLAR TRANSISTOR
- 专利标题(中): 用于监测绝缘栅双极晶体管运行的装置和方法
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申请号: US13882710申请日: 2013-01-09
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公开(公告)号: US20150316602A1公开(公告)日: 2015-11-05
- 发明人: RANDALL C. GRAY , IBRAHIM S. KANDAH , PHILIPE J. PERRUCHOUD , JOHN M. PIGOTT , THIERRY SICARD
- 申请人: RANDALL C. GRAY , IBRAHIM S. KANDAH , PHILIPE J. PERRUCHOUD , JOHN M. PIGOTT , THIERRY SICARD
- 申请人地址: US TX AUSTIN
- 专利权人: FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人: FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址: US TX AUSTIN
- 国际申请: PCT/IB2013/000140 WO 20130109
- 主分类号: G01R31/26
- IPC分类号: G01R31/26
摘要:
Operation of an insulated gate bipolar transistor (IGBT) is monitored by an apparatus that has a capacitor connected between a collector of the IGBT and an input node. A processing circuit, coupled to the input node, responds to current flowing through the capacitor by providing an indication whether a voltage level at the collector is changing and the rate of that change. The processing circuit also employs the capacitor current to provide an output voltage that indicates the voltage at the IGBT collector.
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