- 专利标题： THIN FILM TRANSISTOR PANEL HAVING AN ETCH STOPPER ON SEMICONDUCTOR
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申请号： US14799060申请日： 2015-07-14
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公开(公告)号： US20150318312A1公开(公告)日： 2015-11-05
- 发明人: Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
- 申请人： Samsung Display Co.,Ltd
- 优先权： KR10-2010-0012957 20100211
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L29/786
摘要：
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
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