Invention Application
US20150318446A1 Low-Temperature Fabrication of Transparent Conductive Contacts for p-GaN and n-GaN
审中-公开
用于p-GaN和n-GaN的透明导电触头的低温制造
- Patent Title: Low-Temperature Fabrication of Transparent Conductive Contacts for p-GaN and n-GaN
- Patent Title (中): 用于p-GaN和n-GaN的透明导电触头的低温制造
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Application No.: US14265763Application Date: 2014-04-30
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Publication No.: US20150318446A1Publication Date: 2015-11-05
- Inventor: Jianhua Hu , Heng Kai Hsu , Minh Huu Le , Sandeep Nijhawan , Teresa B. Sapirman
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L33/42
- IPC: H01L33/42 ; H01L33/46 ; H01L33/00 ; H01L33/32
Abstract:
A ternary transparent conductive oxide, indium zinc oxide (IZO), is formed as a thin film by co-sputtering zinc oxide with indium oxide at a deposition temperature between 25 and 200 C. Optionally, up to 1-2% Al may be added by various methods. The layers may be annealed at temperatures between 200 and 400 C. Measurements of IZO with 75-85 wt % In2O3 showed low resistivity and low visible absorbance, both of which were thermally stable up to 400 C.
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